RFP12NOSL datasheet, PDF - EEWORLD Datasheet

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RFP12NOSL: Description12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size109KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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RFP12NOSL Overview

12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

RFP12NOSL Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	100 V
Processing package description	TO-220AB, 3 PIN
Lead-free	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	MATTE Tin
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	12 A
Maximum drain on-resistance	0.2000 ohm
Maximum leakage current pulse	30 A

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<z2\E,(.\T I

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

LJnc.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L

N-Channel Logic Level

Power Field-Effect Transistors (L

FET)

12 A, 80V and 100V

ros(on): 0.2 n

Features:

•

Design optimized tor 5 volt gate drive

• Can be

driven directly from Q-MOS, N-MOS, TTL Circuits

•

Compatible with automotive drive requirements

•

SOA is power-dissipation limited

•

Nanosecond switching speeds

•

Linear transfer characteristics

•

High input impedance

•

Ma/ority carrier device

N-CHANNEL ENHANCEMENT MODE

The RFM12N08L and RFM12N10L and the RFP12N08L and

RFP12N10L' are n-channel enhancement-mode silicon-gate

power field-effect transistors specifically designed for use

with logic level (5 volt) driving sources in applications such

as programmable controllers, automotive switching, and

solenoid drivers. This performance is accomplished through

a special gate oxide design which provides full rated con-

duction at gate biases in the 3-5 volt range, thereby facilitat-

ing true on-off power control directly from logic circuit

supply voltages.

The RFM-series types are supplied in the JEDEC TO-

204AA steel package and the RFP-series types in the

JEDEC TO-220AB plastic package.

Because of

space

limitations branding (marking) on type

RFP12N08L isFl2N08L and on typeRFP12N10L is

F12N10L.

TERMINAL DESIGNATIONS

RFM12N08L

RFM12N10L

JEDEC TO-204AA

RFP12N08L

RFP12N10L

p SOURCE

DRAIN _»

(FLANGE)

=!— i

JEOEC TO-220AB

MAXIMUM RATINGS,

Absolute-Maximum Values (7>25° C):

RFM12N08L

DRAIN-SOURCE VOLTAGE

• Voss

DRAIN-GATE VOLTAGE (R

,= 1 MO) .. .. Vow

GATE-SOURCE VOLTAGE

. . V<J8

DRAIN CURRENT. RMS Continuous

. . ID

Pulsed

lou

POWER DISSIPATION @ ^=25° C ...

^25-C

Derate above T

25° C

OPERATING AND STORAGE

TEMPERATURE

T,, T.

RFM12N10L

100

RFP12NOSL

RFP12N10L

100

±10

0.6

0.48

W/°C

-55 to+150

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

RFP12NOSL Related Products

	RFP12NOSL	RFM12N08L	RFM12N10L	RFP12N08L	RFP12N10L
Description	12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Maker	-	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor
Reach Compliance Code	-	unknow	unknow	unknow	unknow

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