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ECH8309

Description
POWER, FET
Categorysemiconductor    Discrete semiconductor   
File Size303KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

ECH8309 Overview

POWER, FET

ECH8309 Parametric

Parameter NameAttribute value
stateActive
structureSingle
drain_current_max__abs___id_9.5 A
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature150 Cel
larity_channel_typeP-CHANNEL
wer_dissipation_max__abs_1.5 W
sub_categoryOther Transistors
surface mountYES
Ordering number : ENA1418B
ECH8309
P-Channel Power MOSFET
–12V, –9.5A, 16m
Ω
, Single ECH8
Features
http://onsemi.com
1.8V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
2
×0.8mm)
Conditions
Ratings
--12
±10
--9.5
--40
1.5
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Top View
0.25
2.9
0.15
8
5
0 to 0.02
2.8
2.3
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
ECH8309-TL-H
Packing Type : TL
Marking
JL
TL
Lot No.
0.25
1
0.65
4
0.3
Electrical Connection
8
7
6
5
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
1
Bottom View
2
3
4
0.07
0.9
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/22509PE MSIM TC-00001633 No. A1418-1/7
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