B5817WS datasheet, PDF - EEWORLD Datasheet

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B5817WS: Description1 A, 20 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size541KB，3 Pages; ManufacturerDIOTECH; Websitehttp://www.kdiode.com/

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B5817WS Overview

1 A, 20 V, SILICON, SIGNAL DIODE

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts

Forward Current - 1.0 Ampere

B5817WS THRU B5819WS

FEATURES

●

Low Turn-on Voltage

●

Fast Switching

●

Ultra-small surface mount package.

●

PN Junction Guard Ring for Transient and

ESD Protection

A

C

D

B

E

G

SOD-323

Dim

A

B

C

D

E

G

H

Min

2.30

1.75

1.15

0.25

0.05

0.70

0.30

Max

2.70

1.95

1.35

0.35

0.15

0.95

—

MECHANICAL DATA

●

Case: SOD-323, Molded Plastic

●

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

●

Polarity: Cathode Band

●

Weight: 0.004 grams (approx.)

All Dimensions in mm

H

Maximum Ratings

Characteristic

@T

A

=25°C unless otherwise specified

Symbol

V

RRM

V

RWM

V

R

V

R(RMS)

I

FAV

I

FSM

P

D

R JA

TJ TSTG

B5817WS

20

14

1.0

4.0

200

625

B5819WS

40

28

Unit

V

A

mW

°C/W

°C

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Output Current

RMS Reverse Voltage

Non-Repetitive Peak Forward Surge Current

8.3ms single half sine-wave superimpose on

rated load (JEDEC Method)

Power Dissipation

Typical thermal Resistance junction to

Ambient Note

(1)

Operating & Storage Temperature Range

-55 to +150

Electrical Characteristics

Characteristic

@T

A

=25°C unless otherwise specified

Symbol

(2)

B5817WS

20

B5819WS

40

Unit

V

Minimum Reverse Breakdown Voltage

(IR=1mA)

Forward Voltage Note

IF =1A Tj=25

°

C

IF =3A Tj=25

°

(2)

V(BR)R

VF

0.45

0.75

1.0

-

120

0.60

0.90

-

1.0

V

Reverse Current Note

(2)

V

R

=20V, Tj=25

°

C

V

R

=40V, Tj=25

°

C

Junction Capacitance

f

=1MHZ, V

R

=4VDC

IR

Cj

mA

PF

Note: 1. Valid provited that leads are kept at ambient tememperature.

2. Pulse Test : Pulse with = 300 µs , Duty Cycle ≤ 2%

B5817WS Related Products

	B5817WS	B5819WS
Description	1 A, 20 V, SILICON, SIGNAL DIODE	1 A, 40 V, SILICON, SIGNAL DIODE

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