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B5819WS

Description
1 A, 40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size541KB,3 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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B5819WS Overview

1 A, 40 V, SILICON, SIGNAL DIODE

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 40 Volts
Forward Current - 1.0 Ampere
B5817WS THRU B5819WS
FEATURES
Low Turn-on Voltage
Fast Switching
Ultra-small surface mount package.
PN Junction Guard Ring for Transient and
ESD Protection
A
C
D
B
E
G
SOD-323
Dim
A
B
C
D
E
G
H
Min
2.30
1.75
1.15
0.25
0.05
0.70
0.30
Max
2.70
1.95
1.35
0.35
0.15
0.95
MECHANICAL DATA
Case: SOD-323, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.004 grams (approx.)
All Dimensions in mm
H
Maximum Ratings
Characteristic
@T
A
=25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FAV
I
FSM
P
D
R JA
TJ TSTG
B5817WS
20
14
1.0
4.0
200
625
B5819WS
40
28
Unit
V
V
A
A
mW
°C/W
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
RMS Reverse Voltage
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimpose on
rated load (JEDEC Method)
Power Dissipation
Typical thermal Resistance junction to
Ambient Note
(1)
Operating & Storage Temperature Range
-55 to +150
Electrical Characteristics
Characteristic
@T
A
=25°C unless otherwise specified
Symbol
(2)
B5817WS
20
B5819WS
40
Unit
V
Minimum Reverse Breakdown Voltage
(IR=1mA)
Forward Voltage Note
IF =1A Tj=25
°
C
C
IF =3A Tj=25
°
(2)
V(BR)R
VF
0.45
0.75
1.0
-
120
0.60
0.90
-
1.0
V
Reverse Current Note
(2)
V
R
=20V, Tj=25
°
C
V
R
=40V, Tj=25
°
C
Junction Capacitance
f
=1MHZ, V
R
=4VDC
IR
Cj
mA
PF
Note: 1. Valid provited that leads are kept at ambient tememperature.
2. Pulse Test : Pulse with = 300 µs , Duty Cycle ≤ 2%

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