SLD302V
200mW High Power Laser Diode
Description
The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD.
MOCVD: Metal Organic Chemical Vapor Deposition
Features
•
High power
Recommended power output
•
Low operating current
Applications
•
Solid state laser excitation
•
Medical use
Structure
GaAlAs double-hetero-type laser diode
Operating Lifetime
MTTF 10,000H (effective value) at Po = 180mW, Tc = 25°C
Absolute Maximum Ratings
(Tc = 25°C)
•
Optical power output
Po
200
•
Reverse voltage
V
R
LD
2
PD
15
•
Operating temperature
Topr
–10 to +50
•
Storage temperature
Tstg
–40 to +85
2
1
Pin Configuration
Po = 180mW
3
1. LD cathode
2. PD anode
3. COMMON
Bottom View
mW
V
V
°C
°C
Warranty
This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is
shorter.
Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the
analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the
product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull distribution.
Special warranties are also available.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E88060C08-PS
SLD302V
Electrical and Optical Characteristics
Item
Threshold current
Operating current
Operating voltage
Wavelength
∗
1
Monitor current
Radiation angle
(F. W. H. M.
∗
)
Positional accuracy
Differential efficiency
Perpendicular
Parallel
Position
Angle
Symbol
Ith
Iop
Vop
λp
Imon
θ⊥
θ//
∆X, ∆Y
∆φ⊥
η
D
P
O
= 180mW
P
O
= 180mW
P
O
= 180mW
P
O
= 180mW
V
R
= 10V
P
O
= 180mW
770
Conditions
Min.
(Tc: Case temperature, Tc = 25°C)
Typ.
150
350
1.9
Max.
200
500
3.0
840
0.3
28
12
P
O
= 180mW
P
O
= 180mW
0.65
0.9
40
17
±50
±3
Unit
mA
mA
V
nm
mA
degree
degree
µm
degree
mW/mA
∗
F. W. H. M. : Full Width at Half Maximum
∗
1
Wavelength Selection Classification
Type
SLD302V-1
SLD302V-2
SLD302V-3
Type
SLD302V-21
SLD302V-24
SLD302V-25
Wavelength (nm)
785 ± 15
810 ± 10
830 ± 10
Wavelength (nm)
798 ± 3
807 ± 3
810 ± 3
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 1W. However the optical power
density of the laser beam at the diode chip
reaches 1mW/cm
2
. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
Laser diode
Lens
Optical
material
Safety goggles for
protection from
laser beam
IR fluorescent plate
AP
C
ATC
Optical boad
Optical power output control device
temperature control device
–2–
SLD302V
Example of Representative Characteristics
Optical power output vs.
Forward current characteristics
200
T
C
= –10°C
Po – Optical power output [mW]
200
T
C
= –10°C
Po – Optical power output [mW]
T
C
= 0°C
T
C
= 25°C
Optical power output vs. Monitor current characteristics
T
C
= 0°C
T
C
= 50°C
T
C
= 25°C
100
T
C
= 50°C
100
0
0
0
0.1
Imon – Monitor current [mA]
0.2
0
250
I
F
– Forward current [mA]
500
Threshold current vs. Temperature characteristics
1000
Power dependence of far field pattern
(parallel to junction)
T
C
= 25°C
Radiation intensity (optional scale)
Ith – Threshold current [mA]
500
P
O
= 180mW
P
O
= 90mW
P
O
= 30mW
100
–10
0
10
20
30
Tc – Case temperature [°C]
40
50
–30
–20
–10
0
10
Angle [degree]
20
30
Power depecdence of near field pattern
T
C
= 25°C
Radiation intensity (optional scale)
λp
– Oscillation wavelength [nm]
Oscillation wavelength vs. Temperature characteristics
830
P
O
= 180mW
820
810
P
O
= 180mW
P
O
= 150mW
P
O
= 100mW
P
O
= 75mW
P
O
= 50mW
P
O
= 25mW
800
790
50µm
780
–10
0
10
20
30
Tc – Case temperature [°C]
40
50
–3–
SLD302V
Differential efficiency vs. Temperature characteristics
1.5
80
Power dependence of polarization ratio
Tc = 25°C
η
D
– Differential efficiency [mW/mA]
60
Polarization ratio
–10
0
10
20
30
40
50
1.0
40
0.5
20
0
0
0
50
100
150
200
250
Tc – Case temperature [°C]
Po – Optical power output [mW]
–4–
SLD302V
Power dependence of wavelength
Tc = 25°C
Po = 40mW
Relative radiant intensity
Relative radiant intensity
Tc = 25°C
Po = 80mW
800
805
Wavelength [nm]
810
800
805
Wavelength [nm]
810
Tc = 25°C
Po = 120mW
Relative radiant intensity
Relative radiant intensity
Tc = 25°C
Po = 160mW
800
805
Wavelength [nm]
810
800
805
Wavelength [nm]
810
Tc = 25°C
Po = 200mW
Relative radiant intensity
800
805
Wavelength [nm]
810
–5–
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