URF2020C thru URF2060C
Pb
®
URF2020C thru URF2060C
Pb Free Plating Product
20.0 Ampere Dual Fullpak Insulated Package Ultra Fast Recovery Diode
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
Mechanical Data
Case: Fully molded isolation TO-220F/ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202 method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approximately
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.606(15.4)
.583(14.8)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Case
Doubler
Negative
Positive
*
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "A"
Suffix "D"
Suffix "C"
Suffix "DR"
Available for Mass Production
*
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=125
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 10.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
o
o
o
URF2020C
URF2020A
URF2020D
200
140
200
URF2040C
URF2040A
URF2040D
400
280
400
20.0
URF2060C
URF2060A
URF2060D
600
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
200
175
A
V
F
I
R
Trr
C
J
T
J
, T
STG
0.98
1.3
10.0
250
35
1.7
V
uA
uA
nS
120
-55 to +150
70
pF
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
URF2020C thru URF2060C
®
FIG.1 - FORWARD CURRENT DERATING CURVE
20
200
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
16
175
150
125
100
URF2040C-URF2060C
75
50
25
0
10
URF2020C
8
6
4
60 Hz Resistive or
Inductive load
0
0
50
100
o
150
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
100
URF2020C
URF2040C
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
100
T
J
=125 C
o
10
T
J
=25 C
1
o
URF2060C
0.1
0.01
0.2
0.4
0.6
0.8
T
J
=25
o
C
PULSE WIDTH=300uS
1% DUTY CYCLE
1.0
1.2
1.4
1.6
0.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
o
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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