N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 200 Volt V
DS
* R
DS(on)
=10Ω
* Low threshold
APPLICATIONS
* Telephone handsets
ZVNL120A
D
G
S
E-Line
TO92 Compatible
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
200
180
2
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN. MAX. UNIT CONDITIONS.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
200
85
20
7
8
8
20
12
500
10
10
200
0.5
1.5
100
10
100
V
V
nA
µA
µA
mA
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=250mA
V
DS
=25 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=200 V, V
GS
=0
V
DS
=160 V, V
GS
=0V, T=125°C
(2)
V
DS
=25 V, V
GS
=5V
V
GS
=5V,I
D
=250mA
V
GS
=3V, I
D
=125mA
V
DS
=25V,I
D
=250mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3-401
ZVNL120A
TYPICAL CHARACTERISTICS
1.6
V
GS
=
10V
8V
6V
5V
1.0
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
35
40
45
3V
2V
50
4V
V
GS
=
10V
8V
6V
4V
0.6
I
D(On)
Drain Current (Amps)
1.0
I
D(On)
Drain Current (Amps)
1.4
1.2
0.8
0.4
3V
0.2
2V
0
0
2
4
6
8
10
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
1.6
I
D(On)
Drain Current (Amps)
V
DS=
40V
20V
500
g
fs
-Transconductance (mS)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
9
10
400
V
DS=
25V
10V
300
200
100
0
1
2
3
4
5
6
7
8
9
10
V
GS-
Gate Source
Voltage (Volts)
V
GS-
Gate Source Voltage
(Volts)
Transfer Characteristics
Transconductance v gate-source voltage
500
100
g
fs
-Transconductance (mS)
300
200
100
0
0
V
DS=
25V
C-Capacitance (pF)
400
80
60
C
iss
40
20
C
oss
C
rss
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
10
20
30
40
50
I
D
- Drain Current (Amps)
V
DS
-Drain Source Voltage (Volts)
Transconductance v drain current
Capacitance v drain-source voltage
3-402
ZVNL120A
TYPICAL CHARACTERISTICS
R
DS(on)
-Drain Source On Resistance (Ω)
16
100
V
GS
=2V
3V
4V
V
GS
-Gate Source Voltage (Volts)
14
I
D=
700mA
12
10
V
DS
=
50V
100V
150V
5V
10
10V
8
6
4
2
0
0
0.4
0.8
1.2
1.6
2.0
2.4
1
10
100
1000
Q-Charge (nC)
I
D-
Drain Current
(mA)
Gate charge v gate-source voltage
R
DS(ON)
-Drain Source Resistance
(Ω)
On-resistance v drain current
100
2.4
Normalised R
DS(on)
and V
GS(th)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-80 -60 -40 -20
0
V
GS=
5V
I
D=
250mA
10
I
D=
1A
0.5A
0.1A
V
GS=
V
DS
I
D=
1mA
Gate Th
reshold
Voltage
V
GS(th)
20 40 60 80 100 120 140 160
ce
ur
So
-
ain
Dr
ce
an
ist
s
Re
R
D
)
on
S(
V
GS=
3V
I
D=
125mA
1
1
10
20
V
GS
-Gate Source Voltage
(Volts)
T
j
-Junction Temperature (C°)
On-resistance vs gate-source voltage
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3-403
Embedded System
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