ZXMP10A17E6
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
-100V
R
DS(on)
350mΩ @ V
GS
= -10V
450mΩ @ V
GS
= -6V
I
D
T
A
= +25°C
-1.6A
-1.4A
Features and Benefits
Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.018 grams (Approximate)
Applications
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
SOT26
D
D
G
Top View
Pin Out
Top View
D
D
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMP10A17E6TA
Notes:
Compliance
Standard
Case
SOT26
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
1A17 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
2022
J
Aug
8
2023
K
Sep
9
2024
L
Oct
O
2025
M
Nov
N
2026
N
Dec
D
March 2015
ZXMP10A17E6
Document Number DS32027 Rev. 7 - 2
1 of 7
www.diodes.com
© Diodes Incorporated
ZXMP10A17E6
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GS
V
GS
= 10V
(Note 6)
T
A
= +70°C (Note 6)
(Note 5)
(Note 7)
(Note 6)
(Note 7)
I
D
I
DM
I
S
I
SM
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Value
-100
20
-1.6
-1.3
-1.3
-7.7
-2.1
-7.7
Unit
V
V
A
A
A
A
Pulsed Drain Current
V
GS
= 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
R
θJA
T
J
, T
STG
Symbol
Value
1.1
8.8
1.7
13.7
113
73
-55 to +150
Unit
W
mW/°C
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-100
-2
Typ
2.8
-0.85
33
48
424
36.6
29.8
7.1
10.7
1.7
3.8
3
3.5
13.4
7.2
Max
-0.5
100
-4
0.35
0.45
-0.95
Unit
V
µA
nA
V
Ω
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V
DD
= -50V, V
GS
= -10V
I
D
= -1A, R
G
6Ω
V
GS
= -10V
V
DS
= -50V, V
GS
= 0V
F = 1MHz
V
GS
= -6V
V
DS
= -50V
I
D
= -1.4A
Test Condition
I
D
= -250µA, V
GS
= 0V
V
DS
= -100V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= -250µA, V
DS
= V
GS
V
GS
= -10V, I
D
= -1.4A
V
GS
= -6V, I
D
= -1.2A
V
DS
= -15V, I
D
= -1.4A
I
S
= -1.7A, V
GS
= 0V
I
S
= -1.5A, di/dt = 100A/µs
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t
5 sec.
7. Same as Note 5, except the device is pulsed with D = 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.
8. Measured under pulsed conditions. Pulse width
300µs; duty cycle
2%.
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
ZXMP10A17E6
Document Number DS32027 Rev. 7 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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