A Product Line of
Diodes Incorporated
ZXMP6A16DN8
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Max
85mΩ @ V
GS
= -10V
-60V
125mΩ @ V
GS
= -4.5V
SO-8
-3.2A
Package
I
D
T
A
= +25°C
(Notes 4 & 6)
-3.9A
Features
•
•
•
•
•
•
•
•
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Low Profile SOIC Package
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Mechanical Data
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method
208
e3
Weight: 0.074 grams (approximate)
Applications
•
•
•
•
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
SO-8
S1
G1
S2
G2
D1
D1
D2
D2
D1
D2
G1
S1
G2
S2
Equivalent Circuit
Top View
Top View
Ordering Information
Part Number
ZXMP6A16DN8TA
Notes:
Marking
ZXMP6A16D
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
500
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
ZXMP6A16D = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 11 = 2011)
WW = Week (01 - 53)
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
1 of 8
www.diodes.com
July 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A16DN8
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
V
GS
= 10V
(Note 4)
(Notes 6 & 8)
T
A
= +70°C (Notes 6 & 8)
(Notes 5 & 8)
(Notes 7 & 8)
(Notes 6 & 8)
(Notes 7 & 8)
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
-60
±20
-3.9
-3.1
-2.9
-18.3
-3.2
-18.3
Unit
V
V
A
A
A
A
Thermal Characteristics
Characteristic
(Notes 5 & 8)
Power dissipation
Linear derating factor
(Notes 5 & 9)
(Notes 6 & 8)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
Symbol
P
D
(Notes 5 & 8)
(Notes 5 & 9)
(Notes 6 & 8)
(Notes 8 & 10)
R
θ
JA
R
θ
JL
T
J
, T
STG
Value
1.25
10.0
1.81
14.5
2.15
17
100
70
60
48.85
-55 to 150
Unit
W
mW/°C
°C/W
°C
4. AEC-Q101 V
GS
maximum is
±16V.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t
≤
10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.
8. For a dual device with one active die.
9. For a device with two active die running at equal power.
10. Thermal resistance from junction to solder-point.
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
2 of 8
www.diodes.com
July 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A16DN8
Thermal Characteristics
-I
D
Drain Current (A)
Limited
Max Power Dissipation (W)
10
R
DS(on)
1
DC
1s
100ms
Single Pulse
T
amb
=25°C
One active die
10ms
1ms
100µs
100m
10m
100m
1
10
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Two active die
One active die
0
20
40
60
80
100 120 140 160
-V
DS
Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
110
T
amb
=25°C
100
One active die
90
80
70
D=0.5
60
50
40
Single Pulse
D=0.2
30
20
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1
10
100
1k
Derating Curve
Thermal Resistance (°C/W)
Maximum Power (W)
100
Single Pulse
T
amb
=25°C
One active die
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
3 of 8
www.diodes.com
July 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A16DN8
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 11)
Forward Transconductance (Notes 11 & 12)
Diode Forward Voltage (Note 11)
Reverse recovery time (Note 12)
Reverse recovery charge (Note 12)
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 13)
Total Gate Charge (Note 13)
Gate-Source Charge (Note 13)
Gate-Drain Charge (Note 13)
Turn-On Delay Time (Note 13)
Turn-On Rise Time (Note 13)
Turn-Off Delay Time (Note 13)
Turn-Off Fall Time (Note 13)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-60
⎯
⎯
-1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
7.2
-0.85
29.2
39.6
1021
83.1
56.4
12.1
24.2
2.5
3.7
3.5
4.1
35
10
Max
⎯
-1.0
±100
⎯
85
125
⎯
-0.95
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
nA
V
mΩ
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
I
D
= -250µA, V
GS
= 0V
V
DS
= -60V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
I
D
= -250µA, V
DS
= V
GS
V
GS
= -10V, I
D
= -2.9A
V
GS
= -4.5V, I
D
= -2.4A
V
DS
= -15V, I
D
= -2.9A
I
S
= -3.4A, V
GS
= 0V, T
J
= +25°C
I
S
= -2A, di/dt = 100A/µs,
T
J
= +25°C
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
V
GS
= -5V
V
GS
= -10V
V
DS
= -30V,
I
D
= -2.9A
V
DD
= -30V, V
GS
= -10V,
I
D
= -1A, R
G
≅
6.0Ω
11. Measured under pulsed conditions. Pulse width
≤
300µs; duty cycle
≤
2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
4 of 8
www.diodes.com
July 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A16DN8
Typical Characteristics
T = 25°C
10V
5V
-I
D
Drain Current (A)
10
-I
D
Drain Current (A)
4.5V
4V
3.5V
3V
T = 150°C
10V
5V
4V
3.5V
3V
10
1
2.5V
-V
GS
1
2.5V
-V
GS
0.1
2V
0.1
0.1
0.01
-V
DS
Drain-Source Voltage (V)
1
10
0.1
-V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.8
Normalised R
DS(on)
and V
GS(th)
10
Output Characteristics
V
GS
= -10V
I
D
= - 2.9A
R
DS(on)
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
-I
D
Drain Current (A)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
1
T = 150°C
T = 25°C
-V
DS
= 10V
0.1
2
3
4
50
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
2.5V
-V
GS
3V
3.5V
Normalised Curves v Temperature
10
-I
SD
Reverse Drain Current (A)
T = 25°C
10
T = 150°C
1
4V
4.5V
1
T = 25°C
0.1
5V
0.1
0.1
1
10
10V
0.01
0.4
0.6
0.8
1.0
1.2
On-Resistance v Drain Current
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
5 of 8
www.diodes.com
July 2012
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
