ZXTEM322
MPPS
TM
Miniature Package Power Solutions
80V NPN LOW SATURATION TRANSISTOR
SUMMARY
NPN —- V
CEO
= 80V; R
SAT
=
68m ; I
C
= 3.5A
DESCRIPTION
Packaged in the new
innovative 2mm x 2mm MLP (Micro Leaded
Package)
outline, these new 4
th
generation low saturation dual PNP transistors offer
extremely low on state losses making them ideal for use in DC-DC circuits and
various driving and power management functions.
Additionally users gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower Package Height (0.9mm nom)
Reduced component count
MLP322
FEATURES
•
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
(185mV max @1A)
•
h
FE
specified up to 5A
•
I
C
=-3.5A Continuous Collector Current
•
2mm x 2mm MLP
APPLICATIONS
•
DC - DC Converters
•
DC - DC Modules
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXTEM322TA
ZXTEM322TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
Underside View
DEVICE MARKING
•
SE
ISSUE 2 - JUNE 2006
1
SEMICONDUCTORS
ZXTEM322
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C
(a)
Linear Derating Factor
Power Dissipation at TA=25°C
(b)
Linear Derating Factor
Power Dissipation at TA=25°C
(d)
Linear Derating Factor
Power Dissipation at TA=25°C
(e)
Linear Derating Factor
Operating & Storage Temperature Range
Junction Temperature
(a)
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
P
D
P
D
P
D
T
j
:T
stg
T
j
LIMIT
100
80
7.5
5
3.5
1000
1.5
12
2.45
19.6
1
8
3
24
-55 to +150
150
UNIT
V
V
V
A
A
mA
W
mW/ C
W
mW/ C
W
mW/ C
W
mW/ C
C
C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)
Junction to Ambient
(b)
Junction to Ambient
(d)
Junction to Ambient
(e)
SYMBOL
R
JA
R
JA
R
JA
R
JA
VALUE
83
51
125
42
UNIT
C/W
C/W
C/W
C/W
NOTES
(a) For a single device surface mounted on
10
sq cm 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached.
(b) For a single device surface mounted on
10
sq cm 1oz copper on FR4 PCB, in still air conditions measured at t 5 secs
with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions
with minimal lead connections only.
(e) For a single device surface mounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions
with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and
1mm wide tracks is Rth= 300°C/W giving a power rating of Ptot=420mW
ISSUE 2 - JUNE 2006
SEMICONDUCTORS
2
ZXTEM322
TYPICAL CHARACTERISTICS
ISSUE 2 - JUNE 2006
3
SEMICONDUCTORS
ZXTEM322
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
15
45
145
160
240
1.09
0.96
200
300
110
60
20
100
450
450
170
90
30
10
160
11.5
86
1128
18
MIN.
100
80
7.5
TYP.
180
110
8.2
25
25
25
20
60
185
200
325
1.175
1.05
900
MAX. UNIT CONDITIONS
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=80V
V
EB
=6V
V
CE
=65V
I
C
=0.1A, I
B
=10mA*
I
C
=0.5A, I
B
=50mA*
I
C
=1A, I
B
=20mA*
I
C
=1.5A, I
B
=50mA*
I
C
=3.5A, I
B
=300mA*
I
C
=3.5A, I
B
=300mA*
I
C
=3.5A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=1.5A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
MHz I
C
=50mA, V
CE
=10V
f=100MHz
pF
ns
ns
V
CB
=10A, f=1MHz
V
CC
=10V, I
C
=1A
I
B1
=I
B2
=25mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
2%
ISSUE 2 - JUNE 2006
SEMICONDUCTORS
4
ZXTEM322
TYPICAL CHARACTERISTICS
ISSUE 2 - JUNE 2006
5
SEMICONDUCTORS
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