A Product Line of
Diodes Incorporated
ZXTN04120HP5
120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN POWERDI®5
Features
BV
CEO
> 120V
BV
CBO
> 140V
I
C
= 1.5A High Continuous current
hFE > 2k for High Gain @ 1A
43% smaller than SOT223; 60% smaller than TO252
Maximum Height Just 1.1mm
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI5
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable
per MIL-STD-202, Method 208
Weight: 0.093 grams (approximate)
Applications
DC Fans
Regulator Transistors
Relays
Solenoid Driving
C
POWERDI5
B
Top View
Bottom View
Equivalent Circuit
E
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZXTN04120HP5TC
Notes:
Package
POWERDI5
Marking
ZXTN04120H
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
5,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXTN
04120H
YYWWK
YYWWK
DXT790A
ZXTN04120H = Product Type Marking Code
K = Factory Designator
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 13 for 2013)
WW = Week code (01 to 53)
POWERDI is a registered trademark of Diodes Incorporated.
ZXTN04120HP5
Document number: DS36618 Rev. 3 - 2
1 of 7
www.diodes.com
January 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN04120HP5
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
140
120
14
1.5
4
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
P
D
Value
3.2
1.7
0.74
39
75
169
9
10
-55 to +150
Unit
W
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Leads
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
R
θJA
R
θJL
R
θJC
T
J
, T
STG
C/W
C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except mounted on minimum recommended pad (MRP) layout.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Thermal resistance from junction to the top of the case.
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
POWERDI is a registered trademark of Diodes Incorporated.
ZXTN04120HP5
Document number: DS36618 Rev. 3 - 2
2 of 7
www.diodes.com
January 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN04120HP5
Thermal Characteristics and Derating Information
I
C
Collector Current (A)
Limit
I
C
Collector Current (A)
V
CE(sat)
V
CE(sat)
Limit
1
DC
1s
100ms
10ms
T
amb
=25°C
25mm x 25mm
1oz FR4
1ms
100µs
1
DC
1s
100ms
10ms
T
amb
=25°C
50mm x 50mm
2oz FR4
1ms
100µs
100m
100m
10m
V
CE
Collector-Emitter Voltage (V)
1
10
100
10m
Safe Operating Area
T
amb
=25°C
V
CE
Collector-Emitter Voltage (V)
1
10
100
Safe Operating Area
T
amb
=25°C
80
40
Thermal Resistance (°C/W)
60
50
40
30
20
10
0
100µ
25mm x 25mm
1oz FR4
D=0.5
Thermal Resistance (°C/W)
70
30
50mm x 50mm
2oz FR4
D=0.5
20
D=0.2
Single Pulse
D=0.05
D=0.1
D=0.2
Single Pulse
D=0.05
D=0.1
10
1m
10m 100m
1
10
100
1k
0
100µ
1m
10m 100m
1
10
100
1k
Transient Thermal Impedance
Single Pulse
T
amb
=25°C
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
3.5
Max Power Dissipation (W)
Max Power Dissipation (W)
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1
100µ
1m
10m 100m
1
10
100
1k
20
40
60
80
100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
POWERDI is a registered trademark of Diodes Incorporated.
ZXTN04120HP5
Document number: DS36618 Rev. 3 - 2
3 of 7
www.diodes.com
January 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN04120HP5
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
Min
140
120
14
—
—
—
—
2,000
5,000
2,000
500
—
—
Typ
—
—
—
—
Max
—
—
—
100
10
100
100
—
—
Unit
V
V
V
nA
µA
nA
nA
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 120V
V
CB
= 120V, T
A
= +120°C
V
CE
= 120V
V
EB
= 8V
I
C
= 50mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
I
C
= 250mA, I
B
= 0.25mA
I
C
= 1A, I
B
= 1mA
I
C
= 1A, I
B
= 1mA
I
C
= 1A, V
CE
= 5V
V
EB
= 0.5V, f = 1MHz
V
CB
= 10V, f = 1MHz
V
CE
= 10V, I
C
= 100mA,
f=20MHz
V
CC
= 10V, I
C
= 500mA
I
B1
= -I
B2
= 0.5mA
—
—
—
—
—
—
—
—
DC Current Gain (Note 11)
h
FE
100,000
—
—
Collector-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Input Capacitance (Note 11)
Output Capacitance (Note 11)
Current Gain-Bandwidth Product (Note 11)
Turn-On Time
Turn-Off Time
Note:
V
CE(sat)
V
BE(sat)
V
BE(on)
C
ibo
C
obo
f
T
t
on
t
off
1
1.5
1.8
1.7
—
—
—
—
—
V
V
V
pF
pF
MHz
µs
µs
—
—
—
—
150
—
—
—
—
90
15
—
0.5
1.6
11. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
POWERDI is a registered trademark of Diodes Incorporated.
ZXTN04120HP5
Document number: DS36618 Rev. 3 - 2
4 of 7
www.diodes.com
January 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN04120HP5
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
4
Tamb=25°C
3.5
3.0
I
C
/I
B
=1000
150°C
100°C
25°C
-55°C
3
V
CE(SAT)
(V)
V
CE(SAT)
(V)
I
C
/I
B
=400
I
C
/I
B
=2000
I
C
/I
B
=1000
I
C
/I
B
=700
2.5
2.0
1.5
1.0
0.5
10m
2
1
0
10m
I
C
Collector Current (A)
100m
1
V
CE(SAT)
v I
C
I
C
Collector Current (A)
100m
1
V
CE(SAT)
v I
C
25°C
1.6
1.4
150°C
100°C
25°C
V
CE
=5V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10m
-55°C
I
C
Collector Current (A)
100m
1
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
2.0
1.8
I
C
/I
B
=1000
-55°C
Typical Gain (h
FE
)
V
BE(SAT)
(V)
Normalised Gain
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10m
150°C
100°C
h
FE
v I
C
I
C
Collector Current (A)
100m
1
V
BE(SAT)
v I
C
2.2
2.0
1.8
1.6
V
CE
=5V
-55°C
25°C
V
BE(ON)
(V)
1.4
1.2
1.0
0.8
0.6
0.4
10m
100m
100°C
150°C
I
C
Collector Current (A)
1
V
BE(ON)
v I
C
POWERDI is a registered trademark of Diodes Incorporated.
ZXTN04120HP5
Document number: DS36618 Rev. 3 - 2
5 of 7
www.diodes.com
January 2014
© Diodes Incorporated
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