EEWORLDEEWORLDEEWORLD

Part Number

Search

1N6386

Description
1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size278KB,4 Pages
ManufacturerETC2
Download Datasheet View All

1N6386 Overview

1500 W, BIDIRECTIONAL, SILICON, TVS DIODE

1N6373 thru 1N6389
MPTE-5 thru MPTE-45C
Transient Voltage Suppressor
Breakdown Voltage 5.0 to 45 Volts
Peak Pulse Power
1500 Watts
Features
CASE: DO-201AD (DO-27)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
PPM
I
PPM
Conditions
Peak pulse power capability with a 10/1000μs
Peak pulse current with a 10/1000μs
Application
Breakdown Voltages (V
BR
) from 5.0 to 45V
1500W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
Fast Response Time
Low incremental surge resistance
Excellent clamping capability
Available in uni-directional and bi-directional
High temperature soldering guaranteed: 265
/10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on IC
S
, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Part number and polarity diode symbol
Polarity:
Cathode indicated by band
Weight:
1.2g(Approximately)
25
O
C unless otherwise specified
Mechanical Data
Value
1500
SEE TABLE
5
1.52
200
3.5
22
82
Unit
W
A
W
W
A
V
℃/W
℃/W
Steady state power dissipation at T
L
≤40℃
,Lead lengths 0.375”(10mm)
P
M(AV)
I
FSM
V
F
R
θJL
R
θJA
Steady state power dissipation at T
A
=25℃ when mounted on FR4 PC
described for thermal resistance
Peak forward surge current,8.3ms single half sine-wave unidirectional only⑴
Maximum instantaneous forward voltage at 100A for unidirectional only
Thermal resistance junction to lead
Thermal resistance junction to ambient
T
J,
T
STG
Operating and Storage Temperature
-65 to +150
Notes:
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
Document Number: 1N6373 thru 1N6389, MPTE-5 thru MPTE-45C
Feb.29,2012
1
www.smsemi.com

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2247  2342  2624  1763  1724  46  48  53  36  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号