BC807LT1 / BC808LT1
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier applications.
These transistors are subdivided into three groups -16,
-25 and -40, according to their current gain.
As complementary types the NPN transistors BC817
and BC818 are recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
o
C)
Symbol
Collector-Emitter Voltage
(Base shorted)
Collector-Emitter Voltage
(Base open)
Emitter Base Voltage
Collector Current
Power Dissipation at T
SB
=50 C
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Substrate Backside
Junction Temperature Range
Storage Temperature Range
o
Value
50
30
45
25
5
500
300
450
320
(1)
Unit
V
V
V
mA
mW
o
BC807
BC808
BC807
BC808
-V
CES
-V
CEO
-V
EBO
-I
C
P
tot
R
θJA
R
θSB
T
J
T
S
(1)
(1)
C/W
C/W
O
O
O
150
-65 to +150
C
C
G S P FORM A IS AVAILABLE
BC807LT1 / BC808LT1
Characteristics at T
amb
=25
o
C
Symbol
DC Current Gain
at -V
CE
=1V,-I
C
=100mA
Current Gain Group
-16
-25
-40
at -V
CE
=1V, -I
C
=500mA
Collector Saturation Voltage
at -I
C
=500mA, -I
B
=50mA
Base Saturation Voltage
at -I
C
=500mA, -I
B
=50mA
Base-Emitter Voltage
at -I
C
=500mA, -V
CE
=1V
Collector Base Cutoff Current
at -V
CB
=20V,
at -V
CB
=20V,T
J
=150 C
Emitter-Base Cutoff Current
at –V
EB
=4V
Gain -Bandwidth Product
at -V
CE
=5V, -I
C
=10mA, f=50MHz
Collector-Base Capacitance
at -V
CB
=10V, f=1MHz
C
CBO
-
12
-
pF
f
T
-
100
-
MHz
-I
EBO
-
-
100
nA
o
Min.
TYP
Max.
Unit
h
FE
h
FE
h
FE
h
FE
-V
CEsat
-V
BEsat
-V
BE(on)
-I
CBO
-I
CBO
100
160
250
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250
400
600
-
0.7
1.3
1.2
100
5
-
-
-
-
V
V
V
nA
µA
Note:
(1) Device on fiberglass substrate, see layout.
G S P FORM A IS AVAILABLE
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