ZPioducti, {Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BLX95
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
U.H.F. POWER TRANSISTOR
N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the
u.h.f. frequency range for supply voltages up to 28 V. The transistor is resistance stabilized and is
tested under severe load mismatch conditions. Due to a gold metallization excellent reliability proper-
ties have been obtained. The transistor is housed in a capstan envelope with a mpulded cap. All leads
are isolated from the stud.
QUICK REFERENCE DATA
R.F. performance up to T
n
= 25 °C in an unneutralized common-emitter class-B circuit
mode of operation
VCE
V
28
28
f
MHz
470
175
PS
W
PL
W
40
40
'c
A
G
P
dB
V
%
C.W.
c.w.
MECHANICAL DATA
< 14,2
typ. 3,2
< 2,4
typ. 1,9
> 4,5
typ. 1 1
>
60
typ. 75
Dimensions in mm
Fig. 1 SOT-56.
en:
10-32UNF
1,9 __
—
-r
— 0.14
—|
max
3,0
2.7 "
„— 11,5 —, 6,75
.
10.7
_
Diameter of clearance hole in heatsink: max. 4,9 mm.
Torque on nut: min. 1,6 Mm
(15 kg cm)
Mounting hole to have no burrs at either end.
max. 1,7 Nm
De-burring must leave surface flat; do not chamfer
or countersink either end of hole.
(17 kg cm)
When locking is required an adhesive is preferred instead of a lock washer.
PRODUCT SAFETY This device Incorporates beryllium oxide, the dust of which Is toxic. The device
is entirely safe provided that the BeO disc is not damaged.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of aoing to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveted in its use. NJ
Semi-Conduetors encourages customers to verify that datasheets are current before placing orders.
h« ^.AVMI-./* A~* *«•• •*-A.v»M*-
RATINGS
Limiting values in accordance with the Absolute Maximum System
Collector-base voltage (open emitter)
peak value
Collector-emitter voltage (Rjjp, = 10Q)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value) f > 1 MHz
10'
2
7Z675J9
VCBOM
max.
max.
max.
max.
max.
max.
65
65
30
4
3,0
V
V
V
V
A
A
VCERM
VCEO
VEBO
IC(AV)
ICM
150
10,0
7Z675&0
(A)
D.C. SOAR =- Mil
'i'h-S25 °C
Rth
p
tot
f a 1 MHz
(W)
10
100
short time operation
. VSWR > 3
- -n
-I
^
•vj
^
**t
s*,
"H
1't<
)t mi
\
(d.c.)
\ -
•a ""
J_L
•s
7
1
1
1
1
1
.
•>.
•> •N
50
r<
*,t
V
o,
4
^
1
fr
"4
Sk
-»x
1
n
ormal operation
VSWR < 3
10
-1
1
10
V
CE
(V)
50
T
h
(°C)
100
°C
°C
K/W
K/W
Storage temperature
Junction temperature
THERMAL
RESISTANCE
-65 to +200
max.
200
Rth j-mb
R
th mb-h
2,0
0,3
From junction to mounting base
From mounting base to heatsink
=
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Breakdown voltages
Collector-base voltage
open emitter, IG = 50 mA
Collector-emitter voltage
V(BR)CBO
V(BR)CKR
V(BR)CEO
V(BR)EBO
>
>
>
>
65
65
30
4
V
V
V
V
RBE - iO£2, IG ° so mA
Collector-emitter voltage
open base, IG = 50 mA
Emitter-base voltage
open collector, IE = 10 mA
Transient energy
L = 25 mH; f = 50 Hz
open base
-VBE = i,5 v; RBE = 33 Q
D.C. current gain
E
E
>
>
4,5
4,5
mS
mS
IG = 1,0 A; v
CE
= s v
Transition frequency
1C = 4 A: VcE = 25 V
Collector capacitance at f = 1 MHz
f
T
25 to 100
typ. 900
typ,
<
68
80
MHz
pF
pF
IE = i
0:
= so v
Feedback capacitance at f = 1 MHz
1C = 200mA; VCE = 30 V
Collector-stud capacitance
c
re
Ljp
fs
typ.
typ.
39
2
pF
pF
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