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CEP1186

Description
N-Channel Enhancement Mode Field Effect Transistor
File Size445KB,5 Pages
ManufacturerCET
Websitehttp://www.cetsemi.com
Download Datasheet View All

CEP1186 Overview

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP1186
CEB1186
CEF1186
V
DSS
800V
800V
800V
R
DS(ON)
2.3Ω
2.3Ω
2.3Ω
I
D
6A
6A
6A
d
CEP1186/CEB1186
CEF1186
@V
GS
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
G
D
S
G
CEP SERIES
TO-220
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
h
Single Pulsed Avalanche Current
h
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
V
DS
V
GS
I
D
I
DM
e
P
D
E
AS
I
AS
T
J
,T
stg
6
24
166
1.3
9.4
2.5
800
TO-220F
Units
V
V
±
30
6
d
A
A
W
W/ C
mJ
A
C
24
d
50
0.4
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
0.75
62.5
Limit
2.5
65
Units
C/W
C/W
.
Details are subject to change without notice .
1
Rev 2. 2012.Feb
http://www.cetsemi.com
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