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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Designer's Data Sheet
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TMOS
These TMOS Power FETs are designed for high voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100°C
• Designer's Data — IQSS.
v
DS(on).
v
GS(th) »"
d
SOA Specified
at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
MTM2N85
MTM2N90
MTP2N85
MTP2N90
TMOS POWER FETs
2 AMPERES
'DSIonl = 8 OHMS
850 »nd 900 VOLTS
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RQS =
1M
fl>
Gate-Source Voltage — Continuous
— Non-repetitive (t
p
=s SO /is)
Drain Current — Continuous
— Pulsed
Total Power Dissipation @ Trj « 25°C
Derate above 25°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Ambient
TO-204
TO-220
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 5 seconds
Symbol
MTM2N85 MTM2N90
MTP2N8S MTP2N90
850
850
900
900
Unit
Vdc
Vdc
Vdc
Vpk
Adc
VDSS
VDGR
VGS
VGSM
ID
'DM
±20
±40
2
7
75
0.6
-65 to 150
PD
Tj. Ts,g
Watts
MTM2N8S
MTM2N90
TO-204AA
wrc
°C
•c/w
"»JC
"«JA
1.67
30
62.5
TL
275
•c
TO-220AB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VQS - 0, ID = 0.26 mAI
Zero Gate Voltage Drain Current
<VDS = Rated V
DS
s. V
GS
= 0)
(V
DS
= 0.8 Rated V
DSS
. V
G
S = 0, Tj = 125°C)
Gate-Body Leakage Current, Forward (VQSF = 20 Vdc. VDS - 0)
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS " °l
ON CHARACTERISTICS*
Gate Threshold Voltage
V
(BR)DSS
MTM/MTP2N8S
MTM/MTP2N90
860
900
_
0.2
Vdc
IDSS
IGSSF
IGSSR
VGS(th)
I
-
-
2
1.5
-
_
mAdc
1
100
100
nAdc
nAdc
(V
DS
= VGS. ID - 1
<"M
TJ = loo-c
Static Drain-Source On-Resistance (VGS
=
10 Vdc, ID - 1 Adc)
Drain-Source On-Voltage (V<3s = 10 V)
dp = 2 Adc)
(I
D
= 1 Adc. Tj = 100'C)
Forward Transconductance (VDS = 15 V, ID = 1 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS •
25
V,
V
GS ~~ 0-
f = 1
MHz)
See Figure 11
4.5
4
8
20
16
-
1200
300
80
Vdc
rDS(on)
VDS(on)
Ohms
Vdc
9FS
0.5
_
-
—
—
—
—
-'
33 (Typ)
20 (Typ)
13 (Typ)
mhos
Ciss
Coss
Crss
PF
SWITCHING CHARACTERISTICS* (Tj = 100°C)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE DRAIN DIODE CHARACTERISTICS*
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
INTERNAL PACKAGE INDUCTANCE (TO-204)
Internal Drain Inductance
(Measured from the contact screw on the header closer
to the source pin and the center of the die)
Internal Source Inductance
(Measured from the source pin, 0.25" from the package
to the source bond pad)
INTERNAL PACKAGE INDUCTANCE (TO-220)
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25" from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.26" from package to source bond pad.)
•Pulse Test: PulM Width « 300 M*. Duty Cycrt « 2S.
td(on)
(V
DD
= 12S V, ID = 0.5 Rated ID
Rge
n
= 50 ohms)
See Figures 9, 13 and 14
tr
•dloffl
tf
(VDS = 0.8 Rated VDSS-
ID = Rated I
D
, VGS = 10V)
See Figure 12
Q
g
60
160
200
100
40
_
-
1.4
ns
nC
Qgs
Qgd
(IS = Rated ID
VSD
'on
'rr
1 (Typ)
Vdc
VGS - oi
Limited by stray inductance
420 (Typ)
-
ns
nH
Ud
5 (Typ)
LS
12.5 (Typ)
Ld
3.5 (Typl
4.5 (Typ)
LS
7.5 (Typ)
-
—
nH
Quality
•for*,
Microcontroller MCU
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