EEWORLDEEWORLDEEWORLD

Part Number

Search

MTM2N85

Description
Power Field Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size108KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

MTM2N85 Overview

Power Field Effect Transistor

MTM2N85 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknown
C7
/£ii£ij
<z3£.mi-L,on.auctoi L/^ioauata, Line.
tj
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Designer's Data Sheet
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TMOS
These TMOS Power FETs are designed for high voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100°C
• Designer's Data — IQSS.
v
DS(on).
v
GS(th) »"
d
SOA Specified
at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
MTM2N85
MTM2N90
MTP2N85
MTP2N90
TMOS POWER FETs
2 AMPERES
'DSIonl = 8 OHMS
850 »nd 900 VOLTS
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RQS =
1M
fl>
Gate-Source Voltage — Continuous
— Non-repetitive (t
p
=s SO /is)
Drain Current — Continuous
— Pulsed
Total Power Dissipation @ Trj « 25°C
Derate above 25°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Ambient
TO-204
TO-220
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 5 seconds
Symbol
MTM2N85 MTM2N90
MTP2N8S MTP2N90
850
850
900
900
Unit
Vdc
Vdc
Vdc
Vpk
Adc
VDSS
VDGR
VGS
VGSM
ID
'DM
±20
±40
2
7
75
0.6
-65 to 150
PD
Tj. Ts,g
Watts
MTM2N8S
MTM2N90
TO-204AA
wrc
°C
•c/w
"»JC
"«JA
1.67
30
62.5
TL
275
•c
TO-220AB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

MTM2N85 Related Products

MTM2N85 MTM2N90 MTP2N90 MTP2N85
Description Power Field Effect Transistor Power Field Effect Transistor Power Field Effect Transistor Power Field Effect Transistor
Maker New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor
Reach Compliance Code unknown unknow unknow unknown
How do you debug stm32f429 disco in external ram in iar environment?
As the title says, thank you...
wudayongnb stm32/stm8
From the perspective of packaging technology development, semiconductor design is just “getting started”!
When creating a new type of IC, the focus at the beginning is naturally on the design. With the popularity of sub-micron processes, the mask and wafer manufacturing costs have increased significantly ...
songbo PCB Design
How to burn the version of MSP430F2012 chip into the board?
How to burn the version of MSP430F2012 chip into the board?...
zenglinhai Microcontroller MCU
Southeast University Radio Frequency Microwave Lecture Notes
Beginners of RF can take a look at...
hubuzw RF/Wirelessly
Shanghai Telecom's 3G business trial starts: WiFi phones will be available in April
[font=新細明體][size=2][color=black]China Telecom Shanghai Company[/color][/size][/font][font=inherit][size=2][color=black]([/color][/size][/font][font=新細明體][size=2][color=black]referred to as Shanghai Te...
iNewton163 RF/Wirelessly
How to program a microcontroller well (4)
7. #ifndef in header files ------------ Never ignore #ifndef in header files. This is a critical thing. For example, you have two C files, and both of them include the same header file. When compiling...
yuandayuan6999 MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 636  2039  1424  805  2725  13  42  29  17  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号