NTP22N06L, NTB22N06L
Power MOSFET
22 Amps, 60 Volts, Logic Level
N−Channel TO−220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
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•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
22 AMPERES
60 VOLTS
R
DS(on)
= 65 mΩ
N−Channel
D
Value
60
60
"10
"20
22
10
66
60
0.4
−55
to
+175
72
Adc
Apk
W
W/°C
°C
mJ
1
TO−220AB
CASE 221A
STYLE 5
2
3
Unit
Vdc
Vdc
Vdc
V
GS
V
GS
I
D
I
D
G
4
S
1
2
3
D
2
PAK
CASE 418B
STYLE 2
4
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 10 MΩ)
Gate−to−Source Voltage
−
Continuous
−
Non−Repetitive (t
p
v10
ms)
Drain Current
−
Continuous @ T
A
= 25°C
−
Continuous @ T
A
= 100°C
−
Single Pulse (t
p
v10
μs)
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc, L = 1.0 mH
I
L(pk)
= 12 A, V
DS
= 60 Vdc, R
G
= 25
Ω)
Thermal Resistance
−
Junction−to−Case
−
Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
I
DM
P
D
T
J
, T
stg
E
AS
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
R
θJC
R
θJA
T
L
2.5
62.5
260
°C/W
NTx22N06L
LLYWW
2
Drain
°C
NTx22N06L
LLYWW
1
Gate
2
Drain
3
Source
1
Gate
3
Source
NTx22N06L
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
NTP22N06L
NTB22N06L
NTB22N06LT4
Package
TO−220AB
D
2
PAK
D
2
PAK
Shipping
50 Units/Rail
50 Units/Rail
800/Tape & Reel
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 2
1
Publication Order Number:
NTP22N06L/D
NTP22N06L, NTB22N06L
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1.)
(V
GS
= 0 Vdc, I
D
= 250
μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current (V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1.)
Gate Threshold Voltage (Note 1.)
(V
DS
= V
GS
, I
D
= 250
μAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 1.)
(V
GS
= 5.0 Vdc, I
D
= 11 Adc)
Static Drain−to−Source On−Voltage (Note 1.)
(V
GS
= 5.0 Vdc, I
D
= 22 Adc)
(V
GS
= 5.0 Vdc, I
D
= 11 Adc, T
J
= 150°C)
Forward Transconductance (Note 1.) (V
DS
= 7.0 Vdc, I
D
= 11 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 48 Vdc, I
D
= 22 Adc,
V
GS
= 5.0 Vdc) (Note 1.)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
Reverse Recovery Time
(I
S
= 22 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/μs) (Note 1.)
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width
≤
300
μs,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperatures.
(I
S
= 22 Adc, V
GS
= 0 Vdc) (Note 1.)
(I
S
= 22 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
t
rr
t
a
t
b
Q
RR
−
−
−
−
−
−
1.03
0.98
42
26
16
0.060
1.2
−
−
−
−
−
μC
Vdc
ns
(V
DD
= 30 Vdc, I
D
= 22 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1
Ω)
(Note 1.)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
10
115
21
56
10.4
2.5
7.0
20
230
40
120
20
−
−
nC
ns
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
490
167
56
690
230
80
pF
V
GS(th)
Vdc
1.0
−
−
−
−
−
1.79
5.0
57
1.4
1.17
14.6
2.0
−
65
Vdc
1.7
−
−
mhos
mV/°C
mΩ
V
(BR)DSS
Vdc
60
−
−
−
−
68.2
81
−
−
−
−
−
1.0
10
±100
mV/°C
μAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
V
DS(on)
g
FS
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2
NTP22N06L, NTB22N06L
50
I
D
, DRAIN CURRENT (AMPS)
40
30
4.5 V
20
10
0
4V
3.5 V
3V
0
4
5
1
2
3
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
6
5.5 V
5V
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
8V
6V
50
40
30
20
10
0
1.8
T
J
= 25°C
T
J
= 100°C
T
J
=
−55°C
6.6
V
DS
≥
10 V
2.6
3.4
4.2
5
5.8
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (Ω)
0.16
V
GS
= 5 V
0.12
T
J
= 100°C
0.08
T
J
= 25°C
T
J
=
−55°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (Ω)
0.16
Figure 2. Transfer Characteristics
V
GS
= 10 V
0.12
0.08
T
J
= 100°C
T
J
= 25°C
0.04
0.04
T
J
=
−55°C
0
0
10
20
30
40
50
0
0
10
20
30
40
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
−50 −25
0
25
50
75
100
125
150
175
10
0
I
D
= 11 A
V
GS
= 5 V
10000
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
1000
T
J
= 150°C
100
T
J
= 100°C
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTP22N06L, NTB22N06L
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
1600
1400
C, CAPACITANCE (pF)
1200
1000
800
600
400
200
0
10
5 V
GS
0 V
DS
5
C
rss
C
iss
C
oss
C
rss
10
15
20
25
C
iss
6
5
4
3
2
1
0
0
I
D
= 22 A
T
J
= 25°C
2
4
6
8
10
12
V
GS
Q
T
Q
1
Q
2
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
24
I
S
, SOURCE CURRENT (AMPS)
20
16
12
8
4
0
0.6
V
GS
= 0 V
T
J
= 25°C
1000
V
DS
= 30 V
I
D
= 22 A
V
GS
= 5 V
t
r
t
f
t
d(off)
t, TIME (ns)
100
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (Ω)
100
0.68
0.76
0.84
0.92
1
1.08
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
I
D
, DRAIN CURRENT (AMPS)
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
V
GS
= 15 V
SINGLE PULSE
T
C
= 25°C
80
Figure 10. Diode Forward Voltage versus
Current
I
D
= 12 A
10
dc
10 ms
1 ms
60
40
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
0.1
1
100
μs
10
μs
20
10
100
0
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTP22N06L, NTB22N06L
r(t). EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
D = 0.5
0.2
0.1
0.1
0.05
P
(pk)
R
θJC
(t) = r(t) R
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
−
T
C
= P
(pk)
R
θJC
(t)
0.01
0.02
SINGLE PULSE
0.01
0.00001
0.0001
0.001
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
t, TIME (μs)
0.1
t
1
1
10
Figure 13. Thermal Response
di/dt
I
S
t
rr
t
a
t
b
TIME
t
p
I
S
0.25 I
S
Figure 14. Diode Reverse Recovery Waveform
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