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ZXMN2A01

Description
1900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size85KB,4 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric View All

ZXMN2A01 Overview

1900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZXMN2A01 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage20 V
Processing package descriptionSOT-23, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeUniversal small signal
Maximum leakage current1.9 A
Maximum drain on-resistance0.1200 ohm
ZXMN2A01F
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=20V; R
DS(ON)
=0.12
D
=2.09A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
SOT23
DC - DC Converters
Power Management Functions
Motor control
ORDERING INFORMATION
DEVICE
ZXMN2A01FTA
ZXMN2A01FTC
REEL SIZE
7”
13”
TAPE WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
7N2
Top View
PROVISIONAL ISSUE B - JUNE 2001
1

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Index Files: 2596  2496  824  751  1254  53  51  17  16  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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