process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (2.5V to 8V).
Features
•
5.4 A, 20 V
R
DS(ON)
= 35 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 40 mΩ @ V
GS
= 2.5 V
•
Extended V
GSS
range (±8V) for battery applications
•
High performance trench technology for extremely
low R
DS(ON)
•
Low profile TSSOP-8 package
Applications
•
Battery protection
•
DC/DC conversion
•
Power management
•
Load switch
D
S
S
D
G
S
S
D
Pin 1
5
6
7
8
4
3
2
1
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
±
8
(Note 1)
Units
V
V
A
W
°C
5.4
30
1.4
1.1
–55 to +150
– Pulsed
Power Dissipation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
87
114
°C/W
Package Marking and Ordering Information
Device Marking
6426
Device
Si6426DQ
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
Si6426DQ Rev B(W)
Si6426DQ
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
g
Q
gs
Q
gd
I
S
V
SD
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min
20
Typ
Max Units
V
Off Characteristics
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 20 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
DS
= V
GS
,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
I
D
= 250
µA
0.6
0.9
–3
23
33
20
8
11
710
173
84
V
DD
= 6 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
7
17
16
3
I
F
= 1.5 A,
V
GS
= 0 V,
dI
F
/dt = 100A/µs
I
D
= 5.4 A,
V
DS
= 6 V,
V
GS
= 4.5 V
14
7
1.5
1.2
1.25
(Note 2)
14
1
5
100
–100
1.5
mV/°C
µA
nA
nA
V
mV/°C
35
40
mΩ
A
S
pF
pF
pF
14
31
29
6
100
10
ns
ns
ns
ns
ns
nC
nC
nC
A
V
V
DS
= 20 V, V
GS
= 0 V, T
J
=55°C
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 4.5 V,
V
GS
= 2.5 V,
V
GS
= 4.5 V,
V
GS
= 2.5 V,
V
DS
= 10 V,
I
D
= 5.4 A
I
D
= 4.9 A
V
DS
= 5 V
V
DS
= 5 V
I
D
= 5.4 A
Dynamic Characteristics
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Reverse Recovery Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 1.25 A
Voltage
0.7
1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
87°C/W when
2
mounted on a 1in pad
of 2 oz copper.
b)
114°C/W when mounted
on a minimum pad of 2 oz
copper.
c)
2.Pulse
Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Scale 1 : 1 on letter size
paper
Si6426DQ Rev B(W)
Si6426DQ
Typical Characteristics
30
25
I
D
, DRAIN CURRENT (A)
20
15
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.5V
3.5V
2.6
3.0V
2.5V
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
2.5V
3.0V
3.5V
V
GS
= 2.0V
2.0V
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4.0V
4.5V
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.11
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 5.4A
V
GS
= 4.5V
1.4
I
D
= 2.7A
0.09
1.2
0.07
T
A
= 125
o
C
0.05
1
T
A
= 25
o
C
0.03
0.8
0.6
-50
-25
0
25
50
75
100
o
125
150
0.01
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
15
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
T
A
= -55 C
o
25
o
C
125 C
o
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
= 0V
10
1
0.1
0.01
0.001
0.0001
10
T
A
= 125
o
C
25
o
C
-55
o
C
5
0
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6426DQ Rev B(W)
Si6426DQ
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
1200
I
D
= 5.4A
V
DS
= 6V
15V
10V
CAPACITANCE (pF)
1000
C
ISS
800
600
400
200
0
0
2
4
Q
g
, GATE CHARGE (nC)
6
8
f = 1MHz
V
GS
= 0 V
4
3
2
1
C
OSS
C
RSS
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
10
100ms
1s
DC
0.1
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 114
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
10s
100
µ
s
1ms
10ms
1
50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
R
θ
JA
= 114°C/W
T
A
= 25°C
30
20
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
R
θJA
(t) = r(t) * R
θJA
R
θJA
=
114
°C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6426DQ Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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