process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Features
•
–4.5 A, –30 V R
DS(ON)
= 40 mΩ @ V
GS
= –10 V
R
DS(ON)
= 70 mΩ @ V
GS
= –4.5 V
•
Extended V
GSS
range (±20V) for battery applications
•
High performance trench technology for extremely
low R
DS(ON)
•
Low profile TSSOP-8 package
Applications
•
Battery protection
•
DC/DC conversion
•
Power management
•
Load switch
D
S
S
D
G
S
S
D
5
6
7
8
4
3
2
1
TSSOP-8
Pin 1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–30
±
20
(Note 1)
Units
V
V
A
W
°C
–4.5
–30
1.3
0.6
–55 to +150
– Pulsed
Power Dissipation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
87
114
°C/W
Package Marking and Ordering Information
Device Marking
6435
Device
Si6435DQ
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
Si6435DQ Rev B(W)
Si6435DQ
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –24 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
I
D
= –250
µA
Min
–30
Typ
Max Units
V
Off Characteristics
–23
–1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
–1
–1.7
5
27
42
38
–3
V
mV/°C
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –10 V, I
D
= –4.5 A
V
GS
= –4.5 V, I
D
= –3.4 A
V
GS
= –10 V, I
D
= –4.5A, T
J
=125°C
V
GS
= –10 V,
V
DS
= –15 V,
V
DS
= –5 V
I
D
= –4.5 A
–30
40
70
60
mΩ
I
D(on)
g
FS
A
12
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
854
215
112
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
9
14
29
15
20
20
55
25
80
35
ns
ns
ns
ns
ns
nC
nC
nC
Reverse Recovery Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
GS
= 0 V, I
F
= –1.25 A,
dI
F
/dt = 100A/µs
V
DS
= –15 V, I
D
= –4.5 A,
V
GS
= –10 V
19
15
2.4
3
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –1.25 A
Voltage
(Note 2)
–0.75
–1.25
–1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
is 87
°C/W
(steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θJA
is 114
°C/W
(steady state) when mounted on a minimum copper pad on FR-4.
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