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SI6435

Description
4500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size103KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

SI6435 Overview

4500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

SI6435 Parametric

Parameter NameAttribute value
Minimum breakdown voltage30 V
Number of terminals8
each_compliYes
stateActive
structureSINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_4.5 A
Maximum leakage current4.5 A
Maximum drain on-resistance0.0400 ohm
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
jesd_30_codeR-PDSO-G8
jesd_609_codee0
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
operating modeENHANCEMENT MODE
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_240
larity_channel_typeP-CHANNEL
Maximum ambient power consumption1.5 W
wer_dissipation_max__abs_1.5 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountYES
terminal coatingTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_30
Transistor component materialsSILICON
Si6435DQ
September 2001
Si6435DQ
30V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Features
–4.5 A, –30 V R
DS(ON)
= 40 mΩ @ V
GS
= –10 V
R
DS(ON)
= 70 mΩ @ V
GS
= –4.5 V
Extended V
GSS
range (±20V) for battery applications
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
Applications
Battery protection
DC/DC conversion
Power management
Load switch
D
S
S
D
G
S
S
D
5
6
7
8
4
3
2
1
TSSOP-8
Pin 1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–30
±
20
(Note 1)
Units
V
V
A
W
°C
–4.5
–30
1.3
0.6
–55 to +150
– Pulsed
Power Dissipation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
87
114
°C/W
Package Marking and Ordering Information
Device Marking
6435
Device
Si6435DQ
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
Si6435DQ Rev B(W)

SI6435 Related Products

SI6435 SI6435DQ
Description 4500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 4500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 8 8
Number of components 1 1
Maximum operating temperature 150 Cel 150 °C
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Transistor component materials SILICON SILICON
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