Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
·
5.1 A, 30 V.
R
DS(ON)
= 45 mW @ V
GS
= 10 V
R
DS(ON)
= 65 mW @ V
GS
= 4.5 V
·
High performance trench technology for extremely
low R
DS(ON)
·
Low gate charge
·
High power and current handling capability
D
D
S
1
2
G
6
5
4
SuperSOT
TM
-6
D
D
3
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
°C
5.1
20
1.6
0.8
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
qJA
R
qJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
Package Marking and Ordering Information
Device Marking
.456
Device
Si3456DV
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
Ó2002
Fairchild Semiconductor Corporation
Si3456DV Rev B
Si3456DV
Electrical Characteristics
Symbol
BV
DSS
DBV
DSS
DT
J
I
DSS
I
GSS
V
GS(th)
DV
GS(th)
DT
J
R
DS(on)
I
D(on)
g
FS
C
iss
C
oss
C
rss
R
G
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
mA
Min Typ
30
25
Max
Units
V
mV/°C
Off Characteristics
I
D
= 250
mA,
Referenced to 25°C
V
DS
= 30 V,
V
GS
=
±20
V,
V
DS
= V
GS
,
V
GS
= 0 V
T
J
=70°C
V
DS
= 0 V
I
D
= 250
mA
1
1.5
–4
33
44
49
15
12
463
109
44
V
GS
= 15 mV, f = 1.0 MHz
(Note 2)
1
5
±100
2
mA
nA
V
mV/°
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
I
D
= 250
mA,
Referenced to 25°C
I
D
= 5.1 A
V
GS
= 10 V,
I
D
= 4.3 A
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 5.1 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 5.1 A
45
65
71
mW
A
S
pF
pF
pF
W
13
12
36
4.6
12.6
nS
nS
nS
nS
nC
nC
nC
1.3
A
V
nS
nC
Dynamic Characteristics
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
1.1
6.3
6
20
2.3
Switching Characteristics
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
W
V
DS
= 15 V,
V
GS
= 10 V
I
D
= 5.1 A,
9
1.4
1.6
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 1.3 A
Voltage
Diode Reverse Recovery Time
I
F
= 5.1A
d
iF
/d
t
= 100 A/µs
Diode Reverse Recovery Charge
(Note 2)
0.77
18
17
1.2
(Note 2)
Notes:
1.
R
qJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R
qJC
is guaranteed by design while R
qCA
is determined by the user's board design.
78°C/W when mounted on a 1in
2
pad of 2oz copper on FR-4 board.
156°C/W when mounted on a minimum pad.
a.
b.
2.
Pulse Test: Pulse Width
£
300
ms,
Duty Cycle
£
2.0%
Si3456DV Rev B
Si3456DV
Typical Characteristics
20
2.4
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
6.0V
4.5V
3.5V
2.2
2
1.8
1.6
1.4
1.2
1
0.8
V
GS
= 3.0V
I
D
, DRAIN CURRENT (A)
15
3.5V
4.0V
4.5V
6.0V
10V
10
3.0V
5
2.5V
0
0
0.5
1
1.5
2
2.5
3
3.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
5
10
I
D
, DRAIN CURRENT (A)
15
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
I
D
= 2.5A
R
DS(ON)
, ON-RESISTANCE (OHM)
0.12
0.1
0.08
0.06
T
A
= 25
o
C
0.04
0.02
2
4
6
8
10
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 5.1A
V
GS
=10V
1.4
1.2
1
T
A
= 125
o
C
0.8
0.6
-50
-25
0
25
50
75
100
o
125
150
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
20
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
15
T
A
= -55 C
o
25 C
o
V
GS
= 0V
10
1
0.1
0.01
0.001
0.0001
125
o
C
10
T
A
= 125
o
C
25
o
C
-55
o
C
5
0
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si3456DV Rev B
Si3456DV
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
700
I
D
= 5.1A
V
DS
= 10V
20V
15V
CAPACITANCE (pF)
600
C
ISS
500
400
300
200
100
C
RSS
0
0
2
4
6
8
10
8
f = 1MHz
V
GS
= 0 V
6
4
2
C
OSS
0
Q
g
, GATE CHARGE (nC)
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
10
10ms
1
10s
V
GS
= 10V
SINGLE PULSE
R
qJA
= 156
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
1s
100ms
1ms
100us
50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
R
qJA
= 156°C/W
T
A
= 25°C
30
20
0.1
10
0
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
R
qJA
(t) = r(t) * R
qJA
R
qJA
=156 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
qJA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si3456DV Rev B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
FAST
®
DISCLAIMER
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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