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SMBJ120C

Description
600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
CategoryDiscrete semiconductor    Transient suppression diode   
File Size244KB,6 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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SMBJ120C Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ120C Parametric

Parameter NameAttribute value
Case StyleSMB
Ppk(W)600
MIN_(V)133.00
MAX_(V)163.00
Vwm_(V)120.0
Ir_(uA)1
Ippm_(A)2.80
Vc_(V)214.0
classDiodes
SMBJ SERIES
600 Watts Surface Mount
Transient Voltage Suppressor
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps
from 0 volt to BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
260
o
C / 10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Flammability Classification 94V-0
600 watts peak pulse power capability with a 10
x 1000 us waveform by 0.01% duty cycle
SMB/DO-214AA
0.180(4.57)
0.160(4.06)
0.086(2.20)
0.077(1.95)
0.155(3.94)
0.130(3.30)
0.209(5.30)
0.201(5.10)
0.012(0.30)
0.006(0.15)
0.096(2.44)
0.084(2.13)
0.059(1.50)
0.035(0.90)
0.008(0.20)
0.002(0.05)
Mechanical Data
Case: Molded plastic
Terminals: Pure tin plated lead free,
Polarity: Indicated by cathode band except
bipolar
Weight: 0.093gram
Dimensions in inches and(millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms (
N
ote 1)
o
Steady State Power Dissipation
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3) - Unidirectional Only
Maximum Instantaneous Forward Voltage at 50.0A for
Unidirectional Only (Note 4)
Typical Thermal Resistance (Note 5)
Symbol
P
PK
Pd
I
FSM
V
F
R
θJC
R
θJA
T
J
, T
STG
Value
Minimum 600
3
100
3.5 / 5.0
10
55
-65 to + 150
Units
Watts
Watts
Amps
Volts
o
C/W
o
Operating and Storage Temperature Range
C
o
1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25 C Per Fig. 2.
Notes:
2. Mounted on 5.0mm
2
(.013 mm Thick) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 pulses Per Minute Maximum.
4. V
F
=3.5V on SMBJ5.0 thru SMBJ90 Devices and V
F
=5.0V on SMBJ100 thru SMBJ170 Devices.
5. Measured on P.C.B. with 0.27 x 0.27” (7.0 x 7.0mm) Copper Pad Areas
.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types SMBJ5.0 through Types SMBJ170.
2. Electrical Characteristics Apply in Both Directions.
http://www.luguang.cn
mail:lge@luguang.cn
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