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SMD30KPA198A

Description
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
File Size346KB,4 Pages
ManufacturerMDE Semiconductor
Websitehttp://www.mdesemiconductor.com
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SMD30KPA198A Overview

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
SMD30KPA SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE-17.0 TO 280 Volts
30000 Watt Peak Pulse Power
FEATURES
• RoHS Compliant E4
• Typical maximum temperature coefficient
VBR=0.1%xVBR@25 x T
• 30000W Peak Pulse Power
capability on 10/1000 µs waveform
• Excellent clamping capability
• Repetition rate (duty cycle):0.05%
• Low incremental surge resistance
• Fast response time: typically less
than 1.0 ps from 0 volts to BV
Bidirectional less tan 10 ns
• Silver plated lead
Dimensions in millimeters (inches)
MECHANICAL DATA
Case: Epoxy powder over glass passivated junction
Terminals: Solderable per MIL-STD-750, Method 2026
Polarity: Color band denoted positive end (cathode)
except Bipolar
Mounting Position: Any
Weight: 0.08 ounce, 2.9 gram
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types SMD30KPA17A thru types SMD30KPA280A (e.g. SMD30KPA17CA, 30SMD108CA)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
RATING
Peak Pulse Power Dissipation on 10/1000 µs
Peak Pulse Current of on 10/1000 µs waveform
Peak Forward Surge Current,1/20 second / 25
Operatings and Storage Temperature Range
(JEDEC Method)
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
Minimum
30000
SEE TABLE 1
400.0
-55 to + 150
UNITS
Watts
Amps
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