SM 260IS
MK02 S
Advan
nced N-Ch Po
ower MOSFE
ET
SW
WITCHIN REG
NG GULATO APPLICATIO
OR
ON
Fe
eatures
•
Drain-Sour breakdo
rce
own voltage BV
DSS
=600 (Min.)
e:
0V
•
Low gate c
charge: Q
g
=7nC (Typ.)
•
Low drain-
-source On resistance: R
DS(on)
=3.9Ω (Typ.)
Ω
•
100% avala
anche tested
•
RoHS comp
pliant devic
ce
Or
rdering In
nformatio
on
Part Num
mber
SMK026
60IS
Marking
g
SMK0260
Package
I-PAK
(Short Lead
(
d)
GDS
I-PAK
arking Inf
formation
n
Ma
SM
MK
0260
YW
WW
Column 1, 2: Device C
Code
Column 3 Production Information
3:
n
e.g.) YW
WW
-. Y: Y
Year Code
-. WW Week Code
W:
e
bsolute m
maximum ratings
(
C
=25°C unle otherwise noted)
m
(T
ess
e
Ab
Characte
eristic
Drain-source voltage
D
Gate-source v
G
voltage
Drain current (DC)
*
D
Drain current (Pulsed)
*
D
Avalanche current
(Note 2)
A
)
Single pulsed avalanche e
S
energy
(Note 2)
Symbol
V
DS
SS
V
GS
SS
I
D
T
c
=25°C
T
c
=100°C
I
DM
M
I
AS
S
E
AS
I
AR
R
E
AR
P
D
T
J
T
sttg
Rating
60
00
±3
30
2
1.3
35
8
2
13
30
2
5.6
48
8
15
50
-55~
~150
Unit
V
V
A
A
A
A
mJ
A
mJ
W
°C
°C
Repetitive ava
R
alanche curre
(Note 1)
ent
Repetitive ava
R
alanche ener
(Note 1)
rgy
Power dissipa
P
ation
Ju
unction temp
perature
Storage temperature rang
S
ge
*L
Limited only m
maximum junc
ction temperatu
ure
v.
MAR-13
Rev date: 12-M
KS
SD-T6Q018-0
000
www.auk.co
o.kr
1o 8
of
SMK0260IS
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
th(j-c)
R
th(j-a)
Rating
Max. 2.6
Max. 62.5
Unit
°C/W
Electrical Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Internal gate resistance
Forward transfer conductance
(Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
(Note 3,4)
Rise time
(Note 3,4)
Turn-off delay time
Fall time
(Note 3,4)
Total gate charge
(Note 3,4)
Gate-source charge
(Note 3,4)
Gate-drain charge
(Note 3,4)
(Note 3,4)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
R
G
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250uA, V
GS
=0
I
D
=250uA, V
DS
=V
GS
V
DS
=600V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=1A
f=1MHz, V
DS
=0V
V
DS
=10V, I
D
=1A
V
DS
=25V, V
GS
=0V,
f=1MHz
Min.
600
2.0
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
3.9
1.25
5
250
20
3.4
9
25
24
28
7
1.5
4.7
Max.
-
4.0
1
±100
4.7
6.25
-
-
-
-
-
-
-
-
9.5
-
-
Unit
V
V
uA
nA
Ω
Ω
S
pF
V
DD
=300V, I
D
=2A
R
G
=25Ω
-
-
-
-
ns
V
DS
=480V, V
GS
=10V
I
D
=2A
-
-
nC
Source-Drain Diode Ratings and Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
(Note 3,4)
Reverse recovery charge
(Note 3,4)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=2A
I
S
=2A, V
GS
=0V
dI
S
/dt=-100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
230
1
Max.
2
8
1.4
-
-
Unit
A
A
V
ns
uC
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=59.5mH, I
AS
=2A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Rev. date: 12-MAR-13
KSD-T6Q018-000
www.auk.co.kr
2 of 8
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