SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT1192/59
2 AMP
500 VOLTS
PNP TRANSISTOR
TO-59
DESIGNER'S DATA SHEET
FEATURES:
•
•
•
•
•
•
BV
CEO
400V.
Fast Switching.
High Frequency.
Low Saturation Voltage.
200
o
C Operating, Gold Eutectic Die Attach.
Designed for Complementary Use with SFT6800.
MAXIMUM RATINGS
Collector-Emitter Voltage
R
BE
= 1 kOhms
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
=100
o
C
Derate above 25
o
C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
CASE OUTLINE: TO-59
Pin Out:
1 - Collector
2 - Base
3 - Emmiter
SYMBOL
V
CEO
V
CER
V
CBO
V
EBO
I
C
I
B
P
D
T
J,
T
STG
R
Θ
JC
VALUE
400
500
500
10
2
0.5
20
133
-65 to +200
7.5
UNITS
Volts
Volts
Volts
Amps
Amps
W
mW/
o
C
o
C
o
C/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0008C
SFT1192/59
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
=5mA
DC
)
(I
C
=100mA
DC
, R
BE
=1kΩ)
Collector-Base Breakdown Voltage
(I
C
= 100uA
DC
)
Emitter-Base Breakdown Voltage
(I
E
= 20uA
DC
)
Collector Cutoff Current
(V
CB
= 450V
DC
)
Collector Cutoff Current
(V
CE
= 400V
DC
, V
EB
= 1.5V
DC
)
Emitter Cutoff Current
(V
EB
= 6V
DC
)
DC Current Gain*
(V
CE
=10V
DC
)
(I
C
= 1.0mA
DC
)
(I
C
= 50mA
DC
)
(I
C
= 500mA
DC
)
SYMBOL
BV
CEO
BV
CER
BV
CBO
BV
EBO
I
CBO
I
CEV
I
EBO
MIN
400
500
500
10
-
-
-
80
60
40
-
-
-
-
50
-
-
-
-
MAX
-
-
-
-
1.0
10
10
-
-
-
0.4
2.0
1.5
2.0
-
75
300
250
2500
UNITS
V
V
V
µ
A
µ
A
µ
A
H
FE
Collector-Emitter Saturation
(I
C
=50mA
DC,
I
B
= 5mA
DC
)
Voltage*
(I
C
=500mA
DC,
I
B
=50mA
DC
)
Base-Emitter Saturation
Voltage*
(I
C
=50mA
DC,
I
B
= 5mA
DC
)
(I
C
=500mA
DC,
I
B
=50mA
DC
)
V
CE(SAT)
V
BE (SAT)
fT
C
ob
C
ib
t
(on)
t
(off)
V
DC
V
DC
MHz
pf
pf
ns
ns
Current Gain Bandwidth Product
(I
C
= 70mA
DC ,
V
CE
= 30V
DC,
f = 20MHz)
Output Capacitance
(V
CB
= 20V
DC ,
I
E
= 0A
DC,
f = 1.0MHz)
Input Capacitance
(V
BE
= 2V
DC ,
I
C
= 0A
DC,
f = 1.0MHz)
Turn On Time
Turn Off Time
(V
CC
= 100V
DC ,
I
C
= 500mA
DC
,
V
EB(OFF)
=3.7V
DC
,
I
B1
=I
B2
= 50mA
DC
)
*Pulse Test: Pulse Width = 300
µ
s, Duty Cycle = 2%
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