creat by ART
US1A - US1M
1.0AMP. High Efficient Surface Mount Rectifiers
SMA/DO-214AC
Pb
RoHS
COMPLIANCE
Features
Glass passivated chip junction
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Ultrafast recovery time for high efficiency
Low forward voltage, low power loss
High temperature soldering guaranteed:
260℃/10 seconds on terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: Molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Weight: 0.064 grams
Dimensions in inches and (millimeters)
Marking Diagram
US1X
G
Y
WW
= Specific Device Code
= Green Compound
= Year
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum Reverse Current @ Rated VR
T
A
=25
℃
T
A
=125
℃
Symbol US1A US1B US1D US1G US1J US1K US1M
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
Unit
V
V
V
A
A
50
35
50
100
70
100
200
140
200
400
280
400
1
30
600
420
600
800
560
800
1000
700
1000
1.0
5
150
50
15
75
27
- 55 to + 150
- 55 to + 150
1.7
V
uA
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
75
10
O
nS
pF
C/W
O
O
R
θjA
R
θjL
T
J
T
STG
C
C
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:G11
RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M)
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
1.5
AVERAGE FORWARD
CURRENT (A)
50
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
8.3mS Single Half Sine Wave
JEDEC Method
RESISTIVE OR
INDUCTIVE
1
PEAK FORWARD SURGE
A
CURRENT (A)
175
40
30
20
10
0
0.5
0
0
25
50
75
100
o
125
150
1
LEAD TEMPERATURE ( C)
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISRICS
10
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT
(A)
US1A-US1G
INSTANTANEOUS REVERSE CURRENT (uA)
TA=100℃
10
1
0.1
US1J-US1M
1
TA=25℃
0.1
0.01
PULSE WIDTH=300uS
1% DUTY CYCLE
0.001
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE
A
(
℃
/W)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
100
100
US1A-US1G
CAPACITANCE (pF)
TA=25℃
f=1.0MHz
Vsig=50mVp-p
10
10
US1J-US1M
1
1
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
T-PULSE DURATION(s)
10
100
Version:G11
MCU
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