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SGL41-30

Description
1 A, 30 V, SILICON, SIGNAL DIODE, DO-213AB
Categorysemiconductor    Discrete semiconductor   
File Size56KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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SGL41-30 Overview

1 A, 30 V, SILICON, SIGNAL DIODE, DO-213AB

BYM13-20 THRU BYM13-60
SGL41-20 THRU SGL41-60
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 60 Volts
Forward Current -
1.0 Ampere
FEATURES
DO-213AB
Plastic package has carries Underwriters Laboratory
Flammability Classifications 94V-0
For surface mounted applications
Metal silicon junction, majority carrier conduction
High surge capability
Low power loss, high efficiency
High current capability, low forward voltage drop
For use in low voltage, high frequency inverters, free
wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
250°C/10 seconds at terminals
MECHANICAL DATA
Case:
JEDEC DO-213AB molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Two bands indicate cathode end 1st band denotes
device type 2nd band denotes voltage type
Mounting Position:
Any
Weight:
0.116 gram, 0.0041 ounce
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
BYM13
SYMBOLS
-20
SGL41-20
-30
SGL41-30
-40
SGL41-40
-50
SGL41-50
-60
SGL41-60
UNITS
Denotes Schottky devices: 1st band is orange
Polarity color bands (2nd band) voltage type
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(SEE FIG. 1)
Gray
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
20
14
20
Red
30
21
30
Orange
40
28
40
1.0
30.0
Yellow
50
35
50
Green
60
42
60
Volts
Volts
Volts
Amp
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
(NOTE 1)
0.50
0.5
10
110
75.0
30.0
-55 to +125
-55 to +150
0.70
Volts
Maximum reverse current
at rated DC blocking voltage
Maximum thermal resistance
(NOTE 1)
T
A
=25°C
T
A
=100°C
5.0
80.0
mA
pF
°C/W
Typical junction capacitance
(NOTE 2)
(NOTE 4)
(NOTE 3)
R
ΘJA
R
ΘJT
T
J
T
STG
Operating junction temperature range
Storage temperature range
-55 to +150
°C
°C
NOTES:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) Measured at 1 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance junction to terminal, 0.24 x 0.24” (6.0 x 6.0mm) copper pads to each terminal
(4) Thermal resistance junction to ambient, 0.24 x 0.24” (6.0 x 6.0mm) copper pads to each terminal
10/98

SGL41-30 Related Products

SGL41-30 SGL41-60 SGL41-50 SGL41-40 SGL41-20 BYM13-30 BYM13-50 BYM13-20 BYM13-40 BYM13-60
Description 1 A, 30 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 40 V, SILICON, SIGNAL DIODE 1 A, 20 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 30 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 50 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 20 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 40 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB
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