SG5768, SG5770, SG5772, SG5774
SG6506/SG6507/SG6508/SG6509
DIODE ARRAY CIRCUITS
DESCRIPTION
The Linfinity series of diode arrays feature high breakdown, high speed
diodes in a variety of configurations.
Each array configuration consists of either common anode diodes,
common cathode diodes, or a combination of common anode and
common cathode diodes.
Individual diodes within the array have 60V minimum breakdown
voltage, can handle 500mA of current and typically switch in less than
10 nanoseconds.
Each of the array configurations is available in ceramic DIP or ceramic
flatpack and can be processed to JANTXV, JANTX, or JAN flows at
Linfinity’s MIL-S-19500 facility.
FEATURES
•
60V minimum breakdown voltage
•
500mA current capability per diode
•
Fast switching speeds: typically less than
10ns
•
Low leakage current
HIGH RELIABILITY FEATURES
♦
MIL-S-19500/474 QPL - 1N5768 -
- 1N5770 -
- 1N5772 -
- 1N5774 -
♦
JANTXV, JANTX & JAN available
♦
LMI level "S" processing available
1N6506
1N6507
1N6508
1N6509
CIRCUIT DIAGRAMS
COMMON CATHODE
SG5768/SG6506
COMMON ANODE
SG5770/SG6507
COMMON ANODE / COMMON CATHODE
SG5772/SG6508
DUAL COMMON ANODE / COMMON CATHODE
SG5774/SG6509
6/90 Rev 1.1 2/94
Copyright
©
1994
1
11861 Western Avenue
∞
Garden Grove, CA 92841
(714) 898-8121
∞
FAX: (714) 893-2570
L
INFINITY
Microelectronics Inc.
DIODE ARRAY SERIES
ABSOLUTE MAXIMUM RATINGS
(Note 1 & 2)
Breakdown Voltage (V
BR
) ................................................... 60V
Output Current (I
O
), T
C
= 25°C
Continuous ................................................................ 500mA
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
Operating Junction Temperature
Hermetic (J, F Packages) ............................................ 150°C
Storage Temperature Range ............................ -65°C to 200°C
THERMAL DATA
J Package:
Thermal Resistance-
Junction to Case
,
θ
JC
.................. 30°C/W
Thermal Resistance-
Junction to Ambient
,
θ
JA
.............. 80°C/W
F Package (10 Pin):
Thermal Resistance-
Junction to Case
,
θ
JC
.................. 80°C/W
Thermal Resistance-
Junction to Ambient
,
θ
JA
............ 145°C/W
F Package (14 Pin):
Thermal Resistance-
Junction to Case
,
θ
JC
.................. 80°C/W
Thermal Resistance-
Junction to Ambient
,
θ
JA
............ 140°C/W
Note A. Junction Temperature Calculation: T
J
= T
A
+ (P
D
x
θ
JA
).
Note B. The above numbers for
θ
JC
are maximums for the limiting
thermal resistance of the package in a standard mount-
ing configuration. The
θ
JA
numbers are meant to be
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
RECOMMENDED OPERATING CONDITIONS
(Note 3)
Operating Ambient Temperature Range
SG5768 .......................................................... -55°C to 150°C
SG5770 .......................................................... -55°C to 150°C
SG5772 .......................................................... -55°C to 150°C
Operating Ambient Temperature Range
SG5774 .......................................................... -55°C
SG6506 .......................................................... -55°C
SG6507 .......................................................... -55°C
SG6508 .......................................................... -55°C
SG6509 .......................................................... -55°C
to
to
to
to
to
150°C
150°C
150°C
150°C
150°C
Note 3. Range over which the device is functional.
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating temperature of T
A
= 25°C for each diode. Low duty cycle pulse testing techniques
are used which maintains junction and case temperatures equal to the ambient temperature.)
Parameter
Breakdown Voltage (V
BR
)
Forward Voltage (V
F
)
Test Conditions
I
R
= 10µA
Duty Cycle
≤
2%, 300 µs pulse
I
F
= 100mA
I
F
= 200mA
I
F
= 500mA
I
F
= 10mA, T
A
= -55°C
V
R
= 40V
V
R
= 40V, T
A
= 150°C
V
R
= 0V, f = 1MHz, Pin-to-pin
I
F
= 500mA, t
r
≤
15ns, V
fr
= 1.8V, R
S
= 50Ω
I
F
= I
R
= 200mA, i
rr
= 20mA, R
L
= 100Ω
SG5768/SG6506
Min. Typ. Max.
60
1.0
1.1
1.5
1.0
100
50
4
40
20
Units
V
V
V
V
V
nA
µA
pf
ns
Reverse Current (I
R
)
Capacitance (C)
(Note 4)
Forward Recovery Time (t
fr
)
(Note 4)
Reverse Recovery Time (t
rr
)
(Note 4)
Note 4. The parameters, although guaranteed, are not 100% tested in production.
6/90 Rev 1.1 2/94
Copyright
©
1994
2
11861 Western Avenue
∞
Garden Grove, CA 92841
(714) 898-8121
∞
FAX: (714) 893-2570
L
INFINITY
Microelectronics Inc.
ARM Technology
京公网安备 11010802033920号
EEWORLD
