Schottky Barrier Diode
RB228T150FH
Application
Switching power supply
10.0±
0.3
0.1
Datasheet
Dimensions
(Unit : mm)
4.5±
0.3
0.1
2.8±
0.2
0.1
AEC-Q101 Qualified
Structure
3.2±0.2
Features
8.0±0.2
12.0±0.2
1) Cathode common type
2) High reliability
1.2
1.3
5.0±0.2
15.0±
0.4
0.2
Anode Cathode Anode
(1)
(2)
(3)
3) Super low I
R
1
14.0±0.5
Construction
Silicon epitaxial planar type
0.8
2.6±0.5
0.1
0.75±
0.05
2.45±0.5 2.45±0.5
(1) (2) (3)
ROHM : TO220FN
1
: Manufacture Date
Absolute
Maximum Ratings
(T
c
= 25°C)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty≦0.5
Direct Reverse Voltage
Glass epoxy board mounted, 60Hz half sin wave,
Limits
150
150
30
100
150
55
to
150
Unit
V
V
A
A
°C
°C
resistive load, I
O
/2 per diode,T
c
=100ºC Max.
60Hz half sin wave, Non-repetitive at
T
a
=25ºC, 1cycle, per diode
Operating Junction Temperature
Storage Temperature
-
-
Electrical
and Thermal Characteristics
(T
j
= 25°C)
Parameter
Forward Voltage
Reverse Current
Thermal Resistance
Symbol
V
F
I
R
R
th(j-c)
Conditions
I
F
=15A
V
R
=150V
Junction to case
Min.
-
-
-
Typ. Max. Unit
-
-
-
0.88
25
2
V
A
°C / W
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.08 - Rev.A
RB228T150FH
Electrical
Characteristic Curves
Data Sheet
4
1350
T
j
=25°C
V
R
=150V
n=30pcs
1300
T
j
=25°C
f=1MHz
V
R
=0V
n=10pcs
REVERSE CURRENT : I
R
(A)
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
3
1250
1200
1150
1100
1050
1000
950
Ave. : 1014pF
2
Ave. : 0.7A
1
0
900
I
R
DISPERSION MAP
C
t
DISPERSION MAP
600
50
REVERSE RECOVERY TIME : t
rr
(ns)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
550
500
450
400
350
300
I
FSM
1cyc
8.3ms
T
a
=25°C
45
40
35
30
25
20
15
10
Ave. : 16.2ns
T
j
=25°C
I
F
=0.5A
I
R
=1.0A
I
rr
/ I
R
=0.25
n=10pcs
Ave. : 359A
I
FSM
DISPERSION MAP
t
rr
DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.08 - Rev.A
RB228T150FH
Electrical
Characteristic Curves
Data Sheet
10
80
R
th(j-a)
TRANSIENT
THERMAL IMPEDANCE : R
th
(°C/W)
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
I
O
0A
0V
60
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
1
R
th(j-c)
Glass epoxy board mounted
IM=100mA
I
F
=15A
40
DC
D = 1/2
20
Sin(θ=180)
0
time
1ms 300s
0.1
0.001
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
TIME : t(s)
R
th
-t CHARACTERISTICS
AMBIENT TEMPERATURE : T
a
(°C)
DERATING CURVE (I
o
-T
a
)
80
I
O
0A
0V
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
20
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
18
16
14
12
10
8
6
4
2
AVE. : 1.9kV
AVE. : 3.9kV
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
60
DC
40
D = 1/2
20
Sin(θ=180)
0
0
25
50
75
100
125
150
0
C=200pF
R=0
C=100pF
R=1.5k
CASE TEMPERATURE : T
c
(°C)
DERATING CURVE (I
o
-T
c
)
ESD DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.08 - Rev.A
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