DMT6009LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
60V
R
DS(ON)
max
9.5mΩ @ V
GS
= 10V
12mΩ @ V
GS
= 4.5V
I
D
max
T
A
= +25°C
10.8A
9.6
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low R
DS(ON)
– Ensures On State Losses Are Minimized
Excellent Q
gd
x R
DS(ON
)
Product (FOM)
Advanced Technology for DC-DC Converters
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
ADVANCE INFORMATION
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
Power Management Functions
DC-DC Converters
Backlighting
D
SO-8
S
S
S
G
D
D
D
D
Top View
Internal Schematic
G
S
Equivalent circuit
Top View
Ordering Information
(Note 4)
Part Number
DMT6009LSS-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
T6009LS
YY WW
1
4
= Manufacturer’s Marking
T6009LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 15 = 2015)
WW = Week (01 to 53)
DMT6009LSS
Document number: DS38289 Rev. 1 - 2
1 of 6
www.diodes.com
October 2015
© Diodes Incorporated
DMT6009LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Value
60
±20
10.8
8.6
14.4
11.5
3
60
25
31.5
Units
V
V
A
A
A
A
A
mJ
NEW PRODUCT
ADVANCE INFORMATION
Continuous Drain Current (Note 6) V
GS
= 10V
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.25
100
55.5
1.6
75
42
12
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
60
-
-
0.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
7.2
9
0.9
1,925
438
41
1.7
33.5
15.6
4.7
5.3
4.5
8.6
35.9
15.7
18.2
33.1
Max
-
1
±100
2
9.5
12
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 13.5A
V
GS
= 4.5V, I
D
= 11.5A
V
GS
= 0V, I
S
= 20A
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 30V, I
D
= 13.5A
pF
Ω
nC
ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 6Ω, I
D
= 13.5A
ns
nC
I
F
= 13.5A, di/dt = 400A/μs
5. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT6009LSS
Document number: DS38289 Rev. 1 - 2
2 of 6
www.diodes.com
October 2015
© Diodes Incorporated
DMT6009LSS
30.0
V
GS
= 10.0V
I
D
, DRAIN CURRENT (A)
25.0
20.0
15.0
V
GS
= 3.0V
10.0
5.0
0.0
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.01
0.0095
0.009
0.0085
0.008
0.0075
0.007
0.0065
0.006
2
6
10
14
18
22
26
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.014
0.013
0.012
0.011
0.01
0.009
0.008
0.007
0.006
0.005
0.004
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
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0
5
-55
o
C
25
o
C
85
o
C
V
GS
= 10V
175
o
C
150
o
C
125
o
C
1.8
1.6
V
GS
= 4.5V, I
D
= 11.5A
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (℃)
150
V
GS
= 10V
V
GS
= 4.5V
0.1
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
25
20
15
125
o
C
10
150
o
C
5
0
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
4
25
o
C
-55
o
C
85
o
C
30
V
DS
= 5V
NEW PRODUCT
ADVANCE INFORMATION
V
GS
= 2.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.08
0.06
0.04
I
D
= 13.5A
0.02
0
0
4
8
12
16
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 6. On-Resistance Variation with Junction
Temperature
October 2015
© Diodes Incorporated
DMT6009LSS
Document number: DS38289 Rev. 1 - 2
DMT6009LSS
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.02
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2
0.016
1.6
I
D
= 1mA
0.012
1.2
I
D
= 250µA
NEW PRODUCT
ADVANCE INFORMATION
0.008
V
GS
= 10V, I
D
= 13.5A
0.004
0.8
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
30
25
20
15
10
5
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
T
J
= 125
o
C
C
T
, JUNCTION CAPACITANCE (pF)
0.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
V
GS
= 0V
f=1MHz
I
S
, SOURCE CURRENT (A)
1000
C
iss
C
oss
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 150
o
C
100
C
rss
T
J
= -55
o
C
10
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
R
DS(ON)
Limited
P
W
=100µs
I
D
, DRAIN CURRENT (A)
8
10
V
GS
(V)
6
1
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
4
V
DS
= 30V, I
D
= 13.5A
2
0.1
T
J(Max)
= 150℃ T
C
= 25℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
0.1
1
P
W
=10s
DC
10
100
0
0
7
14
21
28
35
Q
g
(nC)
Figure 11. Gate Charge
0.01
0.01
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMT6009LSS
Document number: DS38289 Rev. 1 - 2
4 of 6
www.diodes.com
October 2015
© Diodes Incorporated
DMT6009LSS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 98℃/W
Duty Cycle, D = t1 / t2
10
100
1000
NEW PRODUCT
ADVANCE INFORMATION
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
45
°
A2 A A3
e
D
b
7
°~
9
°
Detail ‘A’
SO-8
Dim
Min
Max
A
-
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
-
0.35
L
0.62
0.82
0°
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
0.254
C1
C2
Y
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
DMT6009LSS
Document number: DS38289 Rev. 1 - 2
5 of 6
www.diodes.com
October 2015
© Diodes Incorporated
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