Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NVJS4151P
TYPICAL ELECTRICAL CHARACTERISTICS
5
4
−I
D
, DRAIN CURRENT (A)
V
GS
=
−1.8
V
V
GS
=
−2.4
V
V
GS
=
−2.0
V
V
GS
=
−2.8
V to 6.0 V
2
.
T
J
= 25°C
−I
D
, DRAIN CURRENT (A)
4
3
2
1
0
V
DS
w
−10
V
3
V
GS
=
−1.6
V
V
GS
=
−1.4
V
1
V
GS
=
−1.0
V
0
0
2
4
V
GS
=
−1.2
V
6
8
0
1
2
3
4
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
RDS
(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
RDS
(on)
, DRAIN−TO−SOURCE RESISTANCE
(W)
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
=
−3.3
A
T
J
= 25°C
0.6
0.5
0.4
0.3
0.2
0.1
0
1
Figure 2. On−Region Characteristics
T
J
= 25°C
V
GS
=
−1.8
V
V
GS
=
−2.5
V
V
GS
=
−4.5
V
2
3
−I
D
, DRAIN CURRENT (A)
4
5
Figure 3. On−Resistance versus
Gate−to−Source Voltage
1.7
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
1.3
1.1
0.9
0.7
−50
−25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
V
GS
=
−4.5
V
I
D
=
−2.9
A
−I
DSS
, LEAKAGE (nA)
10000
100000
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
100
0
4
8
12
16
20
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
3
NVJS4151P
TYPICAL ELECTRICAL CHARACTERISTICS
C, CAPACITANCE (pF)
1000
C
ISS
750
500
250
0
0
4
8
12
V
GS
= 0 V
T
J
= 25°C
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
5
Q
T
4
V
DS
3
2
Q
gs
1
0
0
2
4
6
8
10
Q
G
, TOTAL GATE CHARGE (nC)
Q
gd
I
D
=
−3.3
A
T
J
= 25°C
V
GS
15
12
9
6
3
0
12
16
20
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
3
10000
−I
S
, SOURCE CURRENT (A)
t
f
t
d(off)
t
r
t
d(on)
2.5
2
1.5
1
0.5
0
V
GS
= 0 V
T
J
= 25°C
t, TIME (ns)
1000
100
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
http://onsemi.com
4
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1250
NVJS4151P
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
A
D
5
4
H
GAGE
PLANE
6
E
1
2X
2
3
E1
L2
L
DETAIL A
aaa C
bbb H D
2X 3 TIPS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
INCHES
NOM MAX
−−−
0.043
−−−
0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
e
B
TOP VIEW
6X
b
ddd
A2
A
M
C A-B D
DETAIL A
6X
ccc C
SIDE VIEW
A1
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
0.30
6X
0.66
6X
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
I looked at the DIY oscilloscope and it said that some AVR chips have machine cycles and clock cycles equal. I remember STC also has it? ? ? Please help me, experts...
I have installed cadence, but it always gives an error when analyzing files in the import wizard in ad. Is there anyone who can help me? Please help!!!...
I have just started learning CPLD and using EPM240. I have two questions for help: 1. I read online that EPM240 has 240 logic units and only 240 registers, but when I set reg[7:0] mem[0:1023] in the p...
The data coherence problem of L1D cache used by default when C6678 multi-cores exchange data in MSMCis very troublesome.A small test verifies that the linesize of L1D cache isinitialized to 64Byte:if(...
[i=s] This post was last edited by qwqwqw2088 on 2016-12-24 21:22 [/i] 1. Types and purposes of grounding One type of grounding is safety protection grounding. It mainly includes: protective grounding...
Medicines are special commodities. If patients are given the wrong medicine, fake medicine, inferior medicine or expired medicine, it will pose a threat to people's health and lives.
In recent...[Details]
Overview
PS pressure sensor is an electronic pressure sensor made of semiconductor diaphragm structure. It can convert the physical quantity of air pressure into electrical signals and detect ...[Details]
Keeping the heart environment compact and warm is beneficial in most cases, but it’s another story for electronic heart scanners. When GE Healthcare was designing a scanner that was said to be the fas...[Details]
The 21st century is the century of life and health. The rapid progress of life sciences continues to promote human understanding of their own health and diseases. How to develop innovative medical ele...[Details]
Many medical applications require portable, self-powered devices that do not require external power and data cables. The most obvious example is a portable data logger that patients carry with them to...[Details]
Maximize instrument utilization and reduce
test times
Increasing the throughput of automated test systems can improve efficiency. Using off-the-shelf tools (COTS) such as multicore proc...[Details]
As the price of readers and tags decreases and the global market expands, the application of radio frequency identification (RFID) is increasing day by day. Tags can be powered by readers (passive ...[Details]
introduction
When we run or ride a bicycle, the vibration of our arms often makes the images displayed on the electronic devices in our hands look blurry. Long-term viewing (such as watchi...[Details]
introduction
Mobile phones, MP3 players, hard disk players, digital cameras, PDAs and other devices are all controlled by navigation keys. Currently, the more popular navigation key contro...[Details]
Preface
In recent years, many compact portable electronic products have been developed, such as mobile phones, digital cameras, MP3, MP4, PDA, GPS and DVD, etc. They are not only small in size...[Details]
Two doctors in Chennai, a major technology city in southern India, have developed a generator installed in the high heels. The generator generates weak electricity through the vibration and pressure o...[Details]
The rapid growth of consumer video applications, from portable media players and cell phones to video game consoles, requires a multitude of different interfaces and adapters to enable users to tra...[Details]
I hope my mobile phone has more functions, I hope my digital camera is smaller, I hope my Walkman can listen longer... Consumers are always full of expectations for the performance of portable electro...[Details]
Mesh network architecture and advantages
The Internet is a flat network. The routers that make up the Internet are on the same plane. The mesh network formed by multiple paths between ...[Details]
Although ERP is management software for enterprises, it still has applicable value for the management of hospital finance, human resources, logistics, assets, etc.
At present, the traditional ...[Details]
MCU
京公网安备 11010802033920号
EEWORLD
