S29AL008J55TFI010 datasheet, PDF

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S29AL008J55TFI010: DescriptionFlash,; Categorystorage storage; File Size606KB，51 Pages; ManufacturerCypress Semiconductor

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S29AL008J55TFI010 Overview

Flash,

S29AL008J55TFI010 Parametric

Parameter Name	Attribute value
Objectid	8308375552
package instruction	TSOP, TSOP48,.8,20
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	55 ns
Spare memory width	8
startup block	TOP
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
Durability	1000000 Write/Erase Cycles
JESD-30 code	R-PDSO-G48
length	18.4 mm
memory density	8388608 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	1,2,1,15
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Programming voltage	3 V
ready/busy	YES
reverse pinout	NO
Maximum seat height	1.2 mm
Department size	8K,4K,16K,32K
Maximum standby current	0.000005 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	12 mm

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S29AL008J

8-Mbit (1M × 8-Bit/512K × 16-Bit), 3 V,

Boot Sector Flash

Distinctive Characteristics

Architectural Advantages



Single Power Supply Operation

– Full voltage range: 2.7 to 3.6 volt read and write operations for

battery-powered applications



Manufactured on 110 nm Process Technology

– Fully compatible with 200 nm S29AL008D



Secured Silicon Sector region

– 128-word/256-byte sector for permanent, secure identification

through an 8-word/16-byte random Electronic Serial Number

accessible through a command sequence

– May be programmed and locked at the factory or by the customer



Flexible Sector Architecture

– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte

sectors (byte mode)

– One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword

sectors (word mode)



Sector Group Protection Features

– A hardware method of locking a sector to prevent any program or

erase operations within that sector

– Sectors can be locked in-system or via programming equipment

– Temporary Sector Unprotect feature allows code changes in

previously locked sectors



Unlock Bypass Program Command

– Reduces overall programming time when issuing multiple program

command sequences



Top or Bottom Boot Block Configurations Available



Compatibility with JEDEC standards

– Pinout and software compatible with single-power supply Flash

– Superior inadvertent write protection

Performance Characteristics



High Performance

– Access times as fast as 55 ns

– Extended temperature range (–40°C to +125°C)

– Automotive AEC-Q100 Grade 3 (–40 °C to +85 °C)

– Automotive AEC-Q100 Grade 1 (–40 °C to +125 °C)



Ultra Low Power Consumption (typical values at 5 MHz)

– 0.2 µA Automatic Sleep mode current

– 0.2 µA standby mode current

– 7 mA read current

– 20 mA program/erase current



Cycling Endurance: 1,000,000 cycles per sector typical



Data Retention: 20 years typical

Package Options



48-ball Fine-pitch BGA



48-pin TSOP

Software Features



CFI (Common Flash Interface) Compliant

– Provides device-specific information to the system, allowing host

software to easily reconfigure for different Flash devices



Erase Suspend/Erase Resume

– Suspends an erase operation to read data from, or program data

to, a sector that is not being erased, then resumes the erase

operation



Data# Polling and Toggle Bits

– Provides a software method of detecting program or erase

operation completion

Hardware Features



Ready/Busy# Pin (RY/BY#)

– Provides a hardware method of detecting program or erase cycle

completion



Hardware Reset Pin (RESET#)

– Hardware method to reset the device to reading array data



WP# input pin

– For boot sector devices: at V

, protects first or last 16 Kbyte

sector depending on boot configuration (top boot or bottom boot)

Cypress Semiconductor Corporation

Document Number: 002-00778 Rev. *M

•

198 Champion Court

•

San Jose

CA 95134-1709

•

408-943-2600

Revised June 09, 2017

S29AL008J

General Description

The S29AL008J is a 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in

48-ball Fine-pitch BGA (0.8 mm pitch), and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-

wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt V

supply. A 12.0 V V

or 5.0 V

are not required for write or erase operations. The device can also be programmed in standard

EPROM programmers.

The device offers access times of up to 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus

contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

The device requires only a

single 3.0 volt power supply

for both read and write functions. Internally generated and regulated

voltages are provided for the program and erase operations.

The S29AL008J is entirely command set compatible with the

JEDEC single-power-supply Flash standard.

Commands are written

to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine

that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming

and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.

Device programming occurs by executing the program command sequence. This initiates the

Embedded Program

algorithm—an

internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The

Unlock Bypass

mode

facilitates faster programming times by requiring only two write cycles to program data instead of four.

Device erasure occurs by executing the erase command sequence. This initiates the

Embedded Erase

algorithm—an internal

algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During

erase, the device automatically times the erase pulse widths and verifies proper cell margin.

The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7

(Data# Polling) and DQ6 (toggle)

status bits.

After a program or erase cycle has been completed, the device is ready to read array

data or accept another command.

The

sector erase architecture

allows memory sectors to be erased and reprogrammed without affecting the data contents of other

sectors. The device is fully erased when shipped from the factory.

Hardware data protection

measures include a low V

detector that automatically inhibits write operations during power

transitions. The

hardware sector protection

feature disables both program and erase operations in any combination of the sectors

of memory. This can be achieved in-system or via programming equipment.

The

Erase Suspend/Erase Resume

feature enables the user to put erase on hold for any period of time to read data from, or

program data to, any sector that is not selected for erasure. True background erase can thus be achieved.

The

hardware RESET# pin

terminates any operation in progress and resets the internal state machine to reading array data. The

RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system

microprocessor to read the boot-up firmware from the Flash memory.

The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters

the

automatic sleep mode.

The system can also place the device into the

standby mode.

Power consumption is greatly reduced in

both these modes.

Cypress Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality,

reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim

tunneling. The data is programmed using hot electron injection.

Document Number: 002-00778 Rev. *M

Page 2 of 50

S29AL008J55TFI010 Related Products

	S29AL008J55TFI010	S29AL008J70TFN010	S29AL008J55TFI013	S29AL008J55TFI020
Description	Flash,	Memory architecture (format): FLASH Memory interface type: CFI Memory capacity: 8Mb (1M x 8, 512K x 16) Memory type: Non-Volatile 3.3V 8Mbit	Flash,	Flash,
Objectid	8308375552	-	8308375553	8308375554
package instruction	TSOP, TSOP48,.8,20	-	TSOP, TSOP48,.8,20	TSOP, TSOP48,.8,20
Reach Compliance Code	compliant	-	compliant	compliant
ECCN code	EAR99	-	EAR99	EAR99
Maximum access time	55 ns	-	55 ns	55 ns
Spare memory width	8	-	8	8
startup block	TOP	-	TOP	BOTTOM
command user interface	YES	-	YES	YES
Universal Flash Interface	YES	-	YES	YES
Data polling	YES	-	YES	YES
Durability	1000000 Write/Erase Cycles	-	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
JESD-30 code	R-PDSO-G48	-	R-PDSO-G48	R-PDSO-G48
length	18.4 mm	-	18.4 mm	18.4 mm
memory density	8388608 bit	-	8388608 bit	8388608 bit
Memory IC Type	FLASH	-	FLASH	FLASH
memory width	16	-	16	16
Number of functions	1	-	1	1
Number of departments/size	1,2,1,15	-	1,2,1,15	1,2,1,15
Number of terminals	48	-	48	48
word count	524288 words	-	524288 words	524288 words
character code	512000	-	512000	512000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	-	85 °C	85 °C
Minimum operating temperature	-40 °C	-	-40 °C	-40 °C
organize	512KX16	-	512KX16	512KX16
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP	-	TSOP	TSOP
Encapsulate equivalent code	TSOP48,.8,20	-	TSOP48,.8,20	TSOP48,.8,20
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL
Programming voltage	3 V	-	3 V	3 V
ready/busy	YES	-	YES	YES
reverse pinout	NO	-	NO	NO
Maximum seat height	1.2 mm	-	1.2 mm	1.2 mm
Department size	8K,4K,16K,32K	-	8K,4K,16K,32K	8K,4K,16K,32K
Maximum standby current	0.000005 A	-	0.000005 A	0.000005 A
Maximum slew rate	0.03 mA	-	0.03 mA	0.03 mA
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.7 V	-	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	-	3 V	3 V
surface mount	YES	-	YES	YES
technology	CMOS	-	CMOS	CMOS
Temperature level	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	-	GULL WING	GULL WING
Terminal pitch	0.5 mm	-	0.5 mm	0.5 mm
Terminal location	DUAL	-	DUAL	DUAL
width	12 mm	-	12 mm	12 mm

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