®
BUL1203E
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
DESCRIPTION
The BUL1203E is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight h
FE
range while
maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
TO-220
3
1
2
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-BaseVoltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
1200
1200
550
9
5
8
2
4
100
-65 to 150
150
Unit
V
V
V
V
A
A
A
A
W
o
o
C
C
1/7
December 2003
BUL1203E
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1.25
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
CEO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Test Conditions
V
CE
= 1200 V
V
CE
= 550 V
I
C
= 100 mA
L = 25 mH
550
Min.
Typ.
Max.
100
100
Unit
µA
µA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
V
CE(sat)
∗
Emitter-Base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
I
E
= 10 mA
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 2 A
I
C
= 3 A
I
C
I
C
I
C
I
C
=
=
=
=
1 mA
10 mA
0.8 A
2A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 1 A
I
B
= 0.4 A
I
B
= 1 A
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 3 V
V
CE
= 5 V
I
B1
= 0.4 A
tp = 30
µs
(see figure 2)
C = 1.8 nF
V
BE
= -5 V
9
0.5
0.7
1.5
1.5
1.5
10
10
14
9
V
V
V
V
V
V
V
BE(sat)
∗
h
FE
∗
32
28
0.5
3.0
0.3
µs
µs
µs
mJ
t
on
t
s
t
f
E
ar
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
Repetitive Avalanche
Energy
I
C
= 2 A
I
B2
= -0.8 A
V
CC
= 150 V
L = 2 mH
V
CC
= 50 V
(see figure 3)
2.5
0.2
6
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
Safe Operating Area
Derating Curve
2/7
BUL1203E
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Inductive Load Storage Time
Inductive Load Fall Time
3/7
BUL1203E
Reverse Biased Safe Operating Area
Figure 1:
Inductive Load Switching Test Circuit
Figure 2:
Resistive Load Switching Test Circuit
4/7
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