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SFWI9614

Description
Advanced Power MOSFET
File Size286KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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SFWI9614 Overview

Advanced Power MOSFET

Advanced Power MOSFET
FEATURES
½
Avalanche Rugged Technology
½
Rugged Gate Oxide Technology
½
Lower Input Capacitance
½
Improved Gate Charge
½
Extended Safe Operating Area
½
Lower Leakage Current : 10
µA
(Max.) @ V
DS
= -250V
½
Low R
DS(ON)
: 3.5
(Typ.)
1
SFW/I9614
BV
DSS
= -250 V
R
DS(on)
= 4.0
I
D
= -1.6 A
D
2
-PAK
2
I
2
-PAK
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
o
Total Power Dissipation (T
A
=25 C) *
2
O
1
O
1
O
3
O
o
o
Value
-250
-1.6
-1.0
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ C
o
-6.5
+ 30
_
112
-1.6
2.0
-4.8
3.1
20
0.16
- 55 to +150
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
o
T
J
, T
STG
T
L
o
C
300
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
6.25
40
62.5
o
Units
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
2001
Fairchild Semiconductor Corporation

SFWI9614 Related Products

SFWI9614 SFI9614 SFW9614
Description Advanced Power MOSFET ADVANCED POWER MOSFET ADVANCED POWER MOSFET
Is it Rohs certified? - incompatible incompatible
Parts packaging code - TO-262AA D2PAK
package instruction - IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts - 3 3
Reach Compliance Code - unknow unknow
ECCN code - EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 112 mJ 112 mJ
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 250 V 250 V
Maximum drain current (Abs) (ID) - 1.6 A 1.6 A
Maximum drain current (ID) - 1.6 A 1.6 A
Maximum drain-source on-resistance - 4 Ω 4 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-262AA TO-263AB
JESD-30 code - R-PSIP-T3 R-PSSO-G2
JESD-609 code - e0 e0
Number of components - 1 1
Number of terminals - 3 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) - 20 W 20 W
Maximum pulsed drain current (IDM) - 6.5 A 6.5 A
Certification status - Not Qualified Not Qualified
surface mount - NO YES
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - THROUGH-HOLE GULL WING
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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