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SFI9614

Description
ADVANCED POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size286KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

SFI9614 Overview

ADVANCED POWER MOSFET

SFI9614 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)112 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)1.6 A
Maximum drain current (ID)1.6 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)20 W
Maximum pulsed drain current (IDM)6.5 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Advanced Power MOSFET
FEATURES
½
Avalanche Rugged Technology
½
Rugged Gate Oxide Technology
½
Lower Input Capacitance
½
Improved Gate Charge
½
Extended Safe Operating Area
½
Lower Leakage Current : 10
µA
(Max.) @ V
DS
= -250V
½
Low R
DS(ON)
: 3.5
(Typ.)
1
SFW/I9614
BV
DSS
= -250 V
R
DS(on)
= 4.0
I
D
= -1.6 A
D
2
-PAK
2
I
2
-PAK
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
o
Total Power Dissipation (T
A
=25 C) *
2
O
1
O
1
O
3
O
o
o
Value
-250
-1.6
-1.0
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ C
o
-6.5
+ 30
_
112
-1.6
2.0
-4.8
3.1
20
0.16
- 55 to +150
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
o
T
J
, T
STG
T
L
o
C
300
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
6.25
40
62.5
o
Units
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
2001
Fairchild Semiconductor Corporation

SFI9614 Related Products

SFI9614 SFWI9614 SFW9614
Description ADVANCED POWER MOSFET Advanced Power MOSFET ADVANCED POWER MOSFET
Is it Rohs certified? incompatible - incompatible
Parts packaging code TO-262AA - D2PAK
package instruction IN-LINE, R-PSIP-T3 - SMALL OUTLINE, R-PSSO-G2
Contacts 3 - 3
Reach Compliance Code unknow - unknow
ECCN code EAR99 - EAR99
Avalanche Energy Efficiency Rating (Eas) 112 mJ - 112 mJ
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V - 250 V
Maximum drain current (Abs) (ID) 1.6 A - 1.6 A
Maximum drain current (ID) 1.6 A - 1.6 A
Maximum drain-source on-resistance 4 Ω - 4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-262AA - TO-263AB
JESD-30 code R-PSIP-T3 - R-PSSO-G2
JESD-609 code e0 - e0
Number of components 1 - 1
Number of terminals 3 - 2
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form IN-LINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type P-CHANNEL - P-CHANNEL
Maximum power dissipation(Abs) 20 W - 20 W
Maximum pulsed drain current (IDM) 6.5 A - 6.5 A
Certification status Not Qualified - Not Qualified
surface mount NO - YES
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE - GULL WING
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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