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SFW9Z14

Description
Advanced Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size275KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

SFW9Z14 Overview

Advanced Power MOSFET

SFW9Z14 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)115 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)6.7 A
Maximum drain current (ID)6.7 A
Maximum drain-source on-resistance0.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)38 W
Maximum pulsed drain current (IDM)27 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Advanced Power MOSFET
FEATURES
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
175 C Operating Temperature
n
Lower Leakage Current : 10
µA
(Max.) @ V
DS
= -60V
n
Low R
DS(ON)
: 0.362
(Typ.)
1
SFW/I9Z14
BV
DSS
= -60 V
R
DS(on)
= 0.5
I
D
= -6.7 A
D
2
-PAK
2
o
I
2
-PAK
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 C) *
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
o
o
o
o
Value
-60
-6.7
-4.7
1
O
2
O
1
O
1
O
3
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ C
o
-27
±30
115
-6.7
3.8
-5.5
3.8
38
0.25
- 55 to +175
o
C
300
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
3.95
40
62.5
o
Units
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. C

SFW9Z14 Related Products

SFW9Z14 SFWI9Z14 SFI9Z14
Description Advanced Power MOSFET Advanced Power MOSFET Advanced Power MOSFET
Is it Rohs certified? incompatible - incompatible
Parts packaging code D2PAK - TO-262AA
package instruction SMALL OUTLINE, R-PSSO-G2 - IN-LINE, R-PSIP-T3
Contacts 3 - 3
Reach Compliance Code unknow - unknow
ECCN code EAR99 - EAR99
Avalanche Energy Efficiency Rating (Eas) 115 mJ - 115 mJ
Shell connection DRAIN - DRAIN
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V - 60 V
Maximum drain current (Abs) (ID) 6.7 A - 6.7 A
Maximum drain current (ID) 6.7 A - 6.7 A
Maximum drain-source on-resistance 0.5 Ω - 0.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB - TO-262AA
JESD-30 code R-PSSO-G2 - R-PSIP-T3
JESD-609 code e0 - e0
Number of components 1 - 1
Number of terminals 2 - 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 175 °C - 175 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type P-CHANNEL - P-CHANNEL
Maximum power dissipation(Abs) 38 W - 38 W
Maximum pulsed drain current (IDM) 27 A - 27 A
Certification status Not Qualified - Not Qualified
surface mount YES - NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form GULL WING - THROUGH-HOLE
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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