NVLUS4C12N
Power MOSFET
30 V, 10.7 A, Single N−Channel,
2.0x2.0x0.55 mm
mCoolt
UDFN6 Package
Features
•
Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with
•
•
•
•
•
Exposed Drain Pads for Excellent Thermal Conduction
Ultra Low R
DS(on)
to Reduce Conduction Losses
Optimized Gate Charge to Reduce Switching Losses
Low Capacitance to Minimize Driver Losses
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MOSFET
V
(BR)DSS
R
DS(on)
MAX
9 mW @ 10 V
30 V
12 mW @ 4.5 V
15 mW @ 3.7 V
19 mW @ 3.3 V
10.7 A
I
D
MAX
Applications
D
•
Power Load Switch
•
Synch DC−DC Converters
•
Wireless Charging Circuit
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
Power Dissipa-
tion (Note 1)
Steady
State
t
≤
5s
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
t
p
= 10
ms
P
D
I
DM
T
J
,
T
STG
I
S
T
L
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
10.7
7.7
15.1
1.54
3.1
6.8
4.9
0.63
43
-55 to
150
1.55
260
W
A
°C
A
°C
G
D
A
W
Pin 1
Unit
V
V
A
S
G
S
N−CHANNEL MOSFET
MARKING DIAGRAM
D
1
UDFN6
(mCOOL])
CASE 517BG
AGMG
G
AG = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Power Dissipation (Note 2)
Pulsed Drain Current
MOSFET Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
1
D
6
D
D
2
5
D
3
S
(Top View)
4
S
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size,
2 oz. Cu.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
December, 2014 − Rev. 0
Publication Order Number:
NVLUS4C12N/D
NVLUS4C12N
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t
≤
5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu.
Symbol
R
θJA
R
θJA
R
θJA
Max
81
40.5
200
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V, I
D
= 250
mA
I
D
= 250
mA,
ref to 25°C
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
30
12
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Units
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
V
GS
= 10 V, I
D
= 9.0 A
V
GS
= 4.5 V, I
D
= 8.0 A
V
GS
= 3.7 V, I
D
= 5.0 A
V
GS
= 3.3 V, I
D
= 5.0 A
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
1.3
4.8
7.2
9.3
10.9
13
39
2.1
V
mV/°C
9
12
15
19
mW
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 9.0 A
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V;
I
D
= 9.0 A
V
GS
= 4.5 V, V
DS
= 15 V;
I
D
= 8.0 A
V
GS
= 0 V, f = 1 MHz,
V
DS
= 15 V
1172
546
26
8.4
1.1
3.0
2.2
18
nC
nC
pF
SWITCHING CHARACTERISTICS, VGS = 4.5 V
(Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 8.0 A, R
G
= 3
W
9.4
15
14
3.5
ns
SWITCHING CHARACTERISTICS, VGS = 10 V
(Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DD
= 15 V,
I
D
= 9.0 A, R
G
= 3
W
6.3
14
18
2.4
ns
5. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVLUS4C12N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 1.5 A
T
J
= 25°C
T
J
= 125°C
0.72
0.52
29
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 1.5 A
14.1
14.9
20
nC
ns
1.1
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
5. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
25
3.2 − 10 V
3.0 V
I
D
, DRAIN CURRENT (A)
V
GS
= 2.8 V
T
J
= 25°C
15
2.6 V
10
2.4 V
2.0 V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
2.2 V
0
1.0
1.5
2.0
2.5
3.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
35
30
25
20
15
10
5
T
J
= −55°C
V
DS
= 5 V
I
D
, DRAIN CURRENT (A)
20
T
J
= 125°C
T
J
= 25°C
5
Figure 1. On−Region Characteristics
21
17
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (mW)
T
J
= 25°C
I
D
= 9 A
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (mW)
19
17
15
13
11
9
7
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
15
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 3.3 V
13
V
GS
= 3.7 V
11
V
GS
= 4.5 V
9
V
GS
= 10 V
7
5
1
2
3
4
5
6
7
8
9
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
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3
NVLUS4C12N
TYPICAL CHARACTERISTICS
1.6
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (Normalized)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
10
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
= 10 V
I
D
= 9 A
I
DSS
, LEAKAGE (nA)
1000
T
J
= 125°C
10,000
T
J
= 150°C
100
T
J
= 85°C
V
GS
= 0 V
Figure 5. On−Resistance Variation with
Temperature
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1800
1600
C, CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0
5
10
C
rss
15
20
25
30
C
oss
C
iss
T
J
= 25°C
V
GS
= 0 V
10
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Q
T
8
6
4
Q
gs
Q
gd
T
J
= 25°C
V
GS
= 10 V
V
DD
= 15 V
I
D
= 8 A
2
0
0
2
4
6
8
10
12
14
16
18
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
t
d(on)
1.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
1.2
1.0
0.8
0.6
0.4
0.2
T
J
= 125°C
T
J
= 25°C
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.4
0.5
0.6
0.7
0.8
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NVLUS4C12N
TYPICAL CHARACTERISTICS
100
10
ms
I
D
, DRAIN CURRENT (A)
10
100
ms
1 ms
1
0 V < V
GS
< 10 V
T
A
= 25°C
Single Pulse Response
R
DS(on)
Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
10 ms
0.1
dc
0.01
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
50% Duty Cycle
20%
10 10%
5%
R(t) (°C/W)
2%
1 1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Response
DEVICE ORDERING INFORMATION
Device
NVLUS4C12NTAG
Package
UDFN6
(Pb−Free)
Shipping
†
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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