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NVMFS5C430NLT1G

Description
Single N-Channel Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size121KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NVMFS5C430NLT1G Overview

Single N-Channel Power MOSFET

NVMFS5C430NLT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
package instructionSMALL OUTLINE, R-PDSO-F5
Manufacturer packaging code488AA
Reach Compliance Code_compli
Factory Lead Time29 weeks
Avalanche Energy Efficiency Rating (Eas)493 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain-source on-resistance0.0022 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)900 A
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Transistor component materialsSILICON
Base Number Matches1
NVMFS5C430NL
Power MOSFET
Features
40 V, 1.4 mW, 200 A, Single N−Channel
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS5C430NLWF
Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 3)
Power Dissipation
R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
V
DSM
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
±20
200
140
110
53
38
27
3.8
1.9
900
−55
to
+ 175
120
493
48
260
A
°C
A
mJ
V
°C
W
1
www.onsemi.com
V
(BR)DSS
40 V
R
DS(ON)
MAX
1.4 mW @ 10 V
2.2 mW @ 4.5 V
I
D
MAX
200 A
Unit
V
V
A
G (4)
D (5,6)
W
A
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
S
S
S
G
D
XXXXXX
AYWZZ
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 15 A)
Single Pulse Drain−to−Source Voltage
(t
p
= 10
ms)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXXXX = 5C430L
XXXXXX =
(NVMFS5C430NL) or
XXXXXX =
430LWF
XXXXXX =
(NVMFS5C430NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case
Steady State
Junction−to−Ambient
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
1.4
40
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2016
February, 2017
Rev. 3
1
Publication Order Number:
NVMFS5C430NL/D

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Brand Name ON Semiconduc - ON Semiconduc ON Semiconduc ON Semiconduc - - ON Semiconductor ON Semiconductor
Is it lead-free? Lead free - Lead free Lead free Lead free - - Lead free Lead free
package instruction SMALL OUTLINE, R-PDSO-F5 - SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 - - SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5
Manufacturer packaging code 488AA - 488AA 488AA 488AA - - 488AA 488AA
Reach Compliance Code _compli - _compli _compli _compli - - not_compliant not_compliant
Avalanche Energy Efficiency Rating (Eas) 493 mJ - 493 mJ 493 mJ 493 mJ - - 493 mJ 493 mJ
Shell connection DRAIN - DRAIN DRAIN DRAIN - - DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 40 V - 40 V 40 V 40 V - - 40 V 40 V
Maximum drain-source on-resistance 0.0022 Ω - 0.0022 Ω 0.0022 Ω 0.0022 Ω - - 0.0022 Ω 0.0022 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-F5 - R-PDSO-F5 R-PDSO-F5 R-PDSO-F5 - - R-PDSO-F5 R-PDSO-F5
JESD-609 code e3 - e3 e3 e3 - - e3 e3
Humidity sensitivity level 1 - 1 1 1 - - 1 1
Number of components 1 - 1 1 1 - - 1 1
Number of terminals 5 - 5 5 5 - - 5 5
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - - ENHANCEMENT MODE ENHANCEMENT MODE
Minimum operating temperature -55 °C - -55 °C -55 °C -55 °C - - -55 °C -55 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR - - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL - - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 900 A - 900 A 900 A 900 A - - 900 A 900 A
Guideline AEC-Q101 - AEC-Q101 AEC-Q101 AEC-Q101 - - AEC-Q101 AEC-Q101
surface mount YES - YES YES YES - - YES YES
Terminal surface Tin (Sn) - Tin (Sn) Tin (Sn) Tin (Sn) - - Tin (Sn) Tin (Sn)
Terminal form FLAT - FLAT FLAT FLAT - - FLAT FLAT
Terminal location DUAL - DUAL DUAL DUAL - - DUAL DUAL
Transistor component materials SILICON - SILICON SILICON SILICON - - SILICON SILICON
Base Number Matches 1 - 1 1 1 - - 1 1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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