Chip Silicon Rectifier
SFM21-L THRU SFM26-L
Super fast recovery type
Features
●
SMA-L
0.205(5.2)
0.189(4.8)
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.012(0.3) Typ.
●
0.110(2.8)
0.094(2.4)
●
0.181(4.6)
0.165(4.2)
●
0.075(1.9)
0.067(1.7)
0.034(0.85)
0.034(0.85)
0.024(0.60)
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
0.024(0.60)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
CONDITIONS
Ambient temperature = 50
o
C
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
2.0
50
5.0
100
75
10
-55
+150
o
UNIT
A
A
uA
uA
C / w
pF
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
V
R
= V
RRM
T
A
= 100
o
C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
I
R
Rθ
JA
C
J
T
STG
C
SYMBOLS
SFM21-L
SFM22-L
SFM23-L
SFM24-L
SFM25-L
SFM26-L
MARKING
CODE
S21
S22
S23
S24
S25
S26
V
RRM
50
*1
V
RMS
35
70
*2
V
R
*3
V
F
*4
T
RR
*5
Operating
temperature
(
o
C)
(V)
(V)
(V)
50
100
150
200
300
400
(V)
(nS)
*1 Repetitive peak reverse voltage
0.95
35
-55 to +150
100
150
200
300
400
105
140
210
280
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
1.25
*5 Reverse recovery time
RATING AND CHARACTERISTIC CURVES (SFM21-L THRU SFM26-L)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
10
2.4
2.0
1.6
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.0
1.2
0.8
0.4
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
.1
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
.001
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
40
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
Ω
NONINDUCTIVE
10
Ω
NONINDUCTIVE
30
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
20
10
(+)
25Vdc
(approx.)
( )
1
Ω
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
trr
60
+0.5A
|
|
|
|
|
|
|
|
50
40
30
20
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
10
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)