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SFH9140

Description
Advanced Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size208KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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Advanced Power MOSFET

SFH9140 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-3P
package instructionTO-3P, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)600 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)19 A
Maximum drain current (ID)19 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)166 W
Maximum pulsed drain current (IDM)76 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Advanced Power MOSFET
FEATURES
½
Avalanche Rugged Technology
½
Rugged Gate Oxide Technology
½
Lower Input Capacitance
½
Improved Gate Charge
½
Extended Safe Operating Area
½
175 C Operating Temperature
½
Lower Leakage Current : 10
µA
(Max.) @ V
DS
= -100V
½
Lower R
DS(ON)
: 0.161
(Typ.)
o
SFH9140
BV
DSS
= -100 V
R
DS(on)
= 0.2
I
D
= -19 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,
1/8”
from case for 5-seconds
o
2
O
1
O
1
O
3
O
o
o
Value
-100
-19
-13.3
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ C
o
-76
+
20
_
600
-19
16.6
-6.5
166
1.11
- 55 to +175
o
C
300
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.9
--
40
o
Units
C/W
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