MTB30N06VL
Preferred Device
Power MOSFET
30 Amps, 60 Volts, Logic Level
N−Channel D
2
PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
•
Avalanche Energy Specified
•
I
DSS
and V
DS(on)
Specified at Elevated Temperature
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 1.0 MΩ)
Gate−to−Source Voltage
−
Continuous
−
Non−Repetitive (t
p
≤
10 ms)
Drain Current
−
Continuous
Drain Current
−
Continuous @ 100°C
Drain Current
−
Single Pulse (t
p
≤
10
μs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C
(Note 1.)
Operating and Storage Temperature
Range
Single Pulse Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5 Vdc, Peak
I
L
= 30 Apk, L = 0.342 mH, R
G
= 25
Ω)
Thermal Resistance
−
Junction to Case
−
Junction to Ambient
−
Junction to Ambient (Note 1.)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10
seconds
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
Value
60
60
±
15
±
20
30
20
105
90
0.6
3.0
−
55 to
175
154
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
G
S
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30 AMPERES
60 VOLTS
R
DS(on)
= 50 mΩ
N−Channel
D
I
DM
P
D
T
J
, T
stg
E
AS
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
R
θJC
R
θJA
R
θJA
T
L
1.67
62.5
50
260
°C/W
T30N06VL
YWW
°C
1
Gate
2
Drain
3
Source
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
T30N06VL = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
MTB30N06VL
MTB30N06VLT4
Package
D
2
PAK
D
2
PAK
Shipping
50 Units/Rail
800/Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 6
1
Publication Order Number:
MTB30N06VL/D
MTB30N06VL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current (V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (V
GS
= 5 Vdc, I
D
= 15 Adc)
Drain−to−Source On−Voltage
(V
GS
= 5 Vdc, I
D
= 30 Adc)
(V
GS
= 5 Vdc, I
D
= 15 Adc, T
J
= 150°C)
Forward Transconductance (V
DS
= 6.25 Vdc, I
D
= 15 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(V
DD
= 30 Vdc, I
D
= 30 Adc,
V
GS
= 5 Vdc,
R
G
= 9.1
Ω)
t
d(on)
t
r
t
d(off)
t
f
Q
T
(V
DS
= 48 Vdc, I
D
= 30 Adc,
V
GS
= 5 Vdc)
Q
1
Q
2
Q
3
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 30 Adc, V
GS
= 0 Vdc)
(I
S
= 30 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
Vdc
−
−
−
−
−
−
0.98
0.89
86
49
37
0.228
1.6
−
−
−
−
−
μC
ns
−
−
−
−
−
−
−
−
14
260
54
108
27
5
17
15
30
520
110
220
40
−
−
−
nC
ns
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
1130
360
95
1580
500
190
pF
V
GS(th)
1.0
−
−
−
−
13
1.5
4.0
0.033
1.1
−
21
2.0
−
0.05
1.8
1.73
−
Mhos
Vdc
mV/°C
Ohms
Vdc
V
(BR)DSS
60
−
−
−
−
−
63
−
−
−
−
−
10
100
100
Vdc
mV/°C
μAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
V
DS(on)
g
FS
Reverse Recovery Time
(I
S
= 30 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/μs)
Reverse Recovery Stored
Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width
≤
300
μs,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
t
rr
t
a
t
b
Q
RR
L
D
L
S
nH
−
−
4.5
7.5
−
nH
−
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MTB30N06VL
TYPICAL ELECTRICAL CHARACTERISTICS
60
V
DS
≥
10 V
I D , DRAIN CURRENT (AMPS)
50
25°C
40
30
20
10
0
100°C
T
J
= −55°C
60
I D , DRAIN CURRENT (AMPS)
50
40
30
20
V
GS
= 10 V
8V
6V
5V
T
J
= 25°C
4V
3V
10
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
V
GS
= 10 V
0.06
T
J
= 25°C
0.05
0.04
0.03
0.02
0.01
0
V
GS
= 5 V
10 V
T
J
= 100°C
25°C
− 55°C
10
40
20
30
I
D
, DRAIN CURRENT (AMPS)
50
60
0
10
40
20
30
I
D
, DRAIN CURRENT (AMPS)
50
60
Figure 3. On−Resistance versus Drain Current
and Temperature
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
− 50
− 25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
1
0
V
GS
= 5 V
I
D
= 15 A
I DSS , LEAKAGE (nA)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
R DS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1000
V
GS
= 0 V
T
J
= 125°C
100
100°C
10
10
20
40
50
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
60
Figure 5. On−Resistance Variation with
Temperature
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Figure 6. Drain−To−Source Leakage
Current versus Voltage
MTB30N06VL
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (Δt)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (I
G(AV)
) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/I
G(AV)
During the rise and fall time interval when switching a
resistive load, V
GS
remains virtually constant at a level
known as the plateau voltage, V
SGP
. Therefore, rise and fall
times may be approximated by the following:
t
r
= Q
2
x R
G
/(V
GG
−
V
GSP
)
t
f
= Q
2
x R
G
/V
GSP
where
V
GG
= the gate drive voltage, which varies from zero to V
GG
R
G
= the gate drive resistance
and Q
2
and V
GSP
are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
t
d(on)
= R
G
C
iss
In [V
GG
/(V
GG
−
V
GSP
)]
t
d(off)
= R
G
C
iss
In (V
GG
/V
GSP
)
5000
4500
4000
C, CAPACITANCE (pF)
3500
3000
2500
2000
1500
1000
500
0
10
5
V
GS
C
rss
0
V
DS
5
10
15
20
C
oss
25
C
iss
C
rss
C
iss
V
DS
= 0 V
V
GS
= 0 V
The capacitance (C
iss
) is read from the capacitance curve at
a voltage corresponding to the off−state condition when
calculating t
d(on)
and is read at a voltage corresponding to the
on−state when calculating t
d(off)
.
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
T
J
= 25°C
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
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MTB30N06VL
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
15
V
DS
20
Q
T
, TOTAL CHARGE (nC)
Q3
T
J
= 25°C
I
D
= 30 A
Q1
Q2
QT
V
GS
30
27
24
21
18
15
12
9
6
3
0
25
1000
T
J
= 25°C
I
D
= 30 A
V
DD
= 30 V
V
GS
= 5 V
t, TIME (ns)
100
VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t
r
t
f
t
d(off)
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
30
25
I S , SOURCE CURRENT (AMPS)
20
15
10
5
0
0.5
T
J
= 25°C
V
GS
= 0 V
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
C
) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
in
AN569,
“Transient
Thermal
Resistance−General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(I
DM
) nor rated voltage (V
DSS
) is exceeded and the
transition time (t
r
,t
f
) do not exceed 10
μs.
In addition the total
power averaged over a complete switching cycle must not
exceed (T
J(MAX)
−
T
C
)/(R
θJC
).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (I
DM
), the energy rating is specified at rated
continuous current (I
D
), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I
D
can safely be
assumed to equal the values indicated.
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