SB30100LYT datasheet, PDF - EEWORLD Datasheet

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SB30100LYT: DescriptionSchottky diodes; CategoryDiscrete semiconductor; File Size152KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB30100LYT Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: SB30100LYT

parameter:

Repetitive reverse voltage peak Vrrm: 100V

Maximum average rectified current Io: 30A

Maximum forward surge current I FSM: 275A

Forward voltage drop VF: 1V when IF=30A

Maximum feedback current IR: 200uA when VR=100V

Package: TO-220AB

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SB30100LYT

LOW VF SCHOTTKY BARRIER RECTIFIER

VOLTAGE

FEATURES

• Low forward voltage drop, low power losses

• High efficiency operation

• In compliance with EU RoHS 2002/95/EC directives

0.419(10.66)

0.387(9.85)

0.139(3.55)

MIN.

0.196(5.00)

0.163(4.16)

0.054(1.39)

0.045(1.15)

100 Volts

CURRENT

30 Amperes

MECHANICAL DATA

• Case : TO-220AB, Plastic

• Terminals : Solderable per MIL-STD-750, Method 2026

0.177(4.5)

MAX.

0.624(15.87)

0.548(13.93)

• Weight : 0.0655 ounces, 1.859 grams

0.038(0.96)

0.019(0.50)

0.50(12.7)MIN.

0.058(1.47)

0.042(1.07)

0.115(2.92)

0.080(2.03)

0.025(0.65)MAX.

0.100(2.54)

MAXIMUM RATINGS ( T

=25

C unless otherwise noted )

PARAMETER

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig.1)

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load per diode

Typical thermal resistance

Operating junction

Storage temperature range

SYMBOL

RRM

F(AV)

FSM

Jc

STG

VALUE

100

275

2.5

-55 to + 150

UNIT

C/W

ELECTRICAL CHARACTERISTICS ( T

=25

C unless otherwise noted )

PARAMETER

Breakdown voltage

Instantaneous forward voltage per diode

( Note 1 )

SYMBOL

TEST CONDITIONS

=1.0mA

=5A

=15A

=30A

=70V

=100V

200

A

MIN.

103

TYP.

120

0.50

0.71

MAX.

1.00

UNIT

Reverse current per diode

( Note 2 )

A

Notes :

1 Pulse test : 380μs pulse width, 1% duty cycle

2. Pulse test : Pulse width < 2.5ms

September 17,2010-REV.00

PAGE . 1

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