SFH617A-1, SFH617A-2,
SFH617A-3, SFH617A-4
LOW INPUT CURRENT
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
DESCRIPTION
The SFH617A series of optically coupled
isolators consist of infrared light emitting diodes
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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Low input current 1mA I
F
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High Current Transfer Ratios
(40-320% at 10mA, 13% min at 1mA)
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High BV
CEO
(70V min)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
2.54
7.0
6.0
1.2
5.08
4.08
1
2
Dimensions in mm
4
3
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
3.35
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
70V
6V
150mW
50mA
6V
70mW
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
(derate linearly 2.67mW/°C above 25°C)
0.26
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92330m-AAS/A1
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
MIN
TYP MAX UNITS
1.65
6
10
V
V
µ
A
V
V
50
100
nA
nA
TEST CONDITION
I
F
= 50mA
I
R
= 10
µ
A
V
R
= 6V
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 10V
Output
Collector-emitter Breakdown (BV
CEO
)
70
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
Collector-emitter Dark Current (I
CEO
)
SFH617A-1,2
SFH617A-3,4
Current Transfer Ratio (CTR) (Note 2)
SFH617A-1
SFH617A-2
SFH617A-3
SFH617A-4
SFH617A-1
SFH617A-2
SFH617A-3
SFH617A-4
Collector-emitter Saturation Voltage V
CESAT
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
5300
7500
5x10
10
Coupled
40
63
100
160
13
22
34
56
80
125
200
320
%
%
%
%
%
%
%
%
V
V
RMS
V
PK
Ω
10mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
0.4
10mA I
F
, 2.5mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
SWITCHING CHARACTERISTICS
1.
Linear Operation
(
without saturation) Fig
1.
I
F
= 10mA, V
CC
= 5V, R
L
= 75
Ω
Turn-on Time
Rise Time
Turn-off Time
Fall Time
Cut-off Frequency
t
on
t
r
t
off
t
f
F
CO
2.
Switching Operation (with saturation) Fig 2
V
CC
= 5V, R
L
= 1k
Ω
GROUP
Turn-on Time t
on
t
r
Rise Time
Turn-off Time t
off
t
f
Fall Time
V
CESAT
INPUT
UNITS
3.0
2.0
2.3
2.0
250
µs
µs
µs
µs
kHz
-1
-4
-2 and -3
(I
F
=20mA) (I
F
=10mA) (I
F
=5mA)
3.0
2.0
18
11
4.2
3.0
23
14
< 0.4
6.0
4.6
25
15
UNITS
µs
µs
µs
µs
V
V
CC
= 5.0V
R
L
= 75Ω
OUTPUT
V
CC
= 5.0V
R
L
= 1kΩ
OUTPUT
t
on
t
r
OUTPUT
10%
90%
t
off
t
f
10%
90%
FIG 1
7/12/00
FIG 2
DB92330m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
( normalised to SFH617A-3 )
50
T
A
= 25°C
150
Collector current I
C
(mA)
40
30
20
10
50
30
20
15
10
100
50
I
F
= 5mA
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
50
Current transfer ratio CTR (%)
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
-30
0
25
50
75
100
125
1
2
5
10
20
50
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
DB92330m-AAS/A1
V
CE
= 5V
T
A
= 25°C
SFH617A-4
SFH617A-3
SFH617A-2
Forward current I
F
(mA)
40
30
20
10
0
SFH617A-1
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/12/00
Collector-emitter saturation voltage V
Relative current transfer ratio
I
F
= 10mA
V
CE
= 5V
CE(SAT)
(V)
I
F
= 10mA
I
C
= 2.5mA
Embedded System
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