MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
DESCRIPTION
The MGF431xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to K band amplifiers.
The hermetically sealed metal-ceramic package assures
minimum parasitic losses, and has a configuration suitable for
microstrip circuits.
OUTLINE DRAWING
FEATURES
Low noise figure
@ f=12GHz
MGF4316G : NF min.=0.80dB (MAX.)
MGF4319G : NF min.=0.50dB (MAX.)
High associated gain
Gs=12.0 dB (MIN.)
@ f=12GHz
APPLICATION
L to K band low noise amplifiers.
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
V
DS
=2V , I
D
=10mA
Refer to Bias Procedure
GD-4
ABSOLUTE MAXIMUM RATINGS
Symbol
V
GDO
V
GSO
I
D
P
T
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
( Ta=25°C )
Ratings
-4
-4
60
50
125
-65 ~ +125
Unit
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
V
V
mA
mW
°C
°C
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)GDO
I
GSS
I
DSS
V
GS (off)
gm
Gs
N
Fmin
Rth
(ch-a)
Parameter
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to Source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
Thermal resistance
*1
( Ta=25°C )
Test conditions
IG= -10µA
V
GS
= -2V, V
DS
=0V
V
GS
=0V, V
DS
=2V
V
DS
=2V, I
D
=500µA
V
DS
=2V, I
D
=10mA
V
DS
=2V, I
D
=10mA, f=12GHz
V
DS
=2V, I
D
=10mA, f=12GHz MGF4316G
MGF4319G
∆Vf
method
Limits
Min.
-3
—
15
-0.1
—
12
—
—
—
Typ.
—
—
—
—
75
13.5
—
—
625
Max
—
50
60
-1.5
—
—
0.8
0.5
—
Unit
V
µA
mA
V
mS
dB
dB
˚C/W
*1 : Channel to ambient
MITSUBISHI
ELECTRIC
as of Apr.'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
Typical Characteristics
S Parameters (Ta=25˚C , V
DS
=2V , I
D
=10mA )
f
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Magn.
0.990
0.967
0.925
0.874
0.831
0.783
0.743
0.706
0.682
0.670
0.639
0.617
0.591
0.571
0.565
0.560
0.533
0.484
S11
Angle
-22.3
-40.6
-53.2
-70.9
-88.8
-105.7
-120.6
-132.1
-144.7
-159.1
-171.8
175.3
163.1
152.9
140.1
125.8
109.8
91.2
Magn.
5.775
5.585
5.401
5.161
4.899
4.626
4.316
4.100
3.887
3.765
3.617
3.526
3.421
3.349
3.333
3.349
3.356
3.337
S21
Angle
158.1
140.6
128.9
111.8
96.8
80.8
67.9
56.4
43.2
30.1
17.5
4.5
-8.1
-17.4
-29.6
-44.4
-59.9
-77.0
Magn.
0.020
0.035
0.051
0.064
0.075
0.083
0.087
0.090
0.093
0.094
0.095
0.096
0.094
0.094
0.096
0.098
0.101
0.104
S12
Angle
71.9
61.8
53.3
42.4
29.3
19.0
9.1
4.1
-6.4
-14.3
-24.4
-33.5
-42.5
-50.9
-61.1
-74.1
-88.8
-105.1
Magn.
0.533
0.514
0.489
0.457
0.424
0.391
0.369
0.357
0.357
0.351
0.339
0.329
0.328
0.328
0.343
0.351
0.337
0.310
S22
Angle
-19.2
-33.4
-42.9
-58.2
-71.6
-87.5
-100.6
-110.8
-122.3
-133.0
-143.5
-154.0
-163.9
-171.3
179.5
170.5
161.8
151.6
MSG/MAG
(dB)
28.8
26.5
24.3
21.6
19.8
18.1
16.8
15.9
15.1
14.7
14.0
13.5
13.0
12.7
12.7
12.7
12.5
12.1
0.10
0.19
0.27
0.35
0.43
0.50
0.57
0.64
0.69
0.72
0.80
0.86
0.91
0.95
0.96
0.98
1.01
1.11
K
Noise Parameters (Ta=25˚C , V
DS
=2V , I
D
=10mA )
f
(GHz)
4
8
12
14
18
G opt.
Magn.
0.76
0.59
0.48
0.41
0.34
Angle
49
95
139
166
-142
Rn
(Ω)
12.5
4.7
2.3
1.8
1.5
NFmin.(dB)
MGF4316G MGF4319G
0.31
0.47
0.60
0.69
0.88
0.24
0.35
0.45
0.50
0.61
Gs
(dB)
18.3
15.9
13.5
12.3
9.9
MITSUBISHI
ELECTRIC
as of Apr.'98
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