Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4522AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of colour TV receivers and PC monitors.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current (Fig 17)
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
7
6
285
170
MAX.
1500
800
10
25
45
3.0
-
-
400
230
UNIT
V
V
A
A
W
V
A
A
ns
ns
T
hs
≤
25 ˚C
I
C
= 7 A; I
B
= 1.75 A
f = 16 kHz
f = 64 kHz
I
Csat
= 7 A; f = 16 kHz
I
Csat
= 6 A; f = 64 kHz
PINNING - SOT399
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
10
25
6
9
6
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
Turn-off current.
December 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4522AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 7 A; I
B
= 1.75 A
I
C
= 7 A; I
B
= 1.75 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 7 A; V
CE
= 5 V
MIN.
-
-
-
7.5
800
-
0.85
-
4.2
TYP.
-
-
-
13.5
-
-
0.94
10
5.8
MAX.
1.0
2.0
1.0
-
-
3.0
1.03
-
7.3
UNIT
mA
mA
mA
V
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Switching times (64 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
CONDITIONS
f = 16 kHz; I
Csat
= 7 A; I
B1
= 1.4 A;
(I
B2
= -3.5 A)
TYP.
MAX.
UNIT
µs
ns
µs
ns
t
s
t
f
3.5
285
4.3
400
t
s
t
f
f = 64 kHz; I
Csat
= 6 A; I
B1
= 1.2 A;
(I
B2
= -3.6 A)
2.3
170
2.7
230
2
Measured with half sine-wave voltage (curve tracer).
December 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4522AX
+ 50v
100-200R
TRANSISTOR
IC
DIODE
ICsat
t
Horizontal
Oscilloscope
Vertical
IB
IB1
t
5 us
6.5 us
16 us
IB2
100R
6V
30-60 Hz
1R
VCE
t
Fig.1. Test circuit for V
CEOsust
.
Fig.4. Switching times waveforms (64 kHz).
IC / mA
ICsat
90 %
IC
250
10 %
200
ts
IB
tf
t
100
IB1
t
0
VCE / V
min
VCEOsust
- IB2
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.5. Switching times definitions.
TRANSISTOR
IC
DIODE
ICsat
+ 150 v nominal
adjust for ICsat
t
Lc
IB
IB1
t
20us
26us
64us
VCE
IB2
IBend
LB
T.U.T.
Cfb
-VBB
t
Fig.3. Switching times waveforms (16 kHz).
Fig.6. Switching times test circuit.
December 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4522AX
100
hFE
VCE = 1 V
BU4522AF/X
Ths = 25 C
Ths = 85 C
VBEsat \ V
1.3
1.2
1.1
IC = 7 A
Ths = 25 C
Ths = 85 C
1
10
0.9
0.8
0.7
1
0.01
IC = 6 A
0.1
1
10
IC / A 100
0.6
0
1
2
3
IB / A
4
Fig.7. High and low DC current gain.
Fig.10. Typical base-emitter saturation voltage.
BU4522AF/X
100
VCE = 5 V
Ths = 25 C
Ths = 85 C
5
ts/tf/ us
BU4522AF/X 16kHz
4
ICsat = 7 A
Ths = 85 C
Freq = 16 kHz
3
hFE
10
2
1
1
0.01
0
0.1
IC / A1
10
100
0
0.5
1
1.5
IBend / A
2
Fig.8. High and low DC current gain.
Fig.11. Typical collector storage and fall time.
I
C
=7 A; T
j
= 85˚C; f = 16kHz
ts/tf/ us
5
10
VCEsat (V)
Ths = 25 C
Ths = 85 C
BU4522AF/X
BU4522AF/X 64kHz
4
ICsat = 6 A
Ths = 85 C
Freq = 64 kHz
1
3
0.1
IC/IB = 5
2
1
0.01
0.1
1
10
IC / A
100
0
0
0.5
1
1.5
IB / A
2
Fig.9. Typical collector-emitter saturation voltage.
Fig.12. Typical collector storage and fall time.
I
C
= 6 A; T
j
= 85˚C; f = 64 kHz
December 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4522AX
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
with heatsink compound
IC / A
30
BU2522AF
20
10
0
20
40
60
80
Ths / C
100
120
140
0
0
500
VCE / V
1000
1500
Fig.13. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
Zth / (K/W)
10
Fig.16. Reverse bias safe operating area. T
j
≤
T
jmax
BU4522AF
10
9
Ic(sat) (A)
0.5
1
0.2
0.1
0.05
0.1
0.02
8
7
6
5
4
0.01
P
D
t
p
D=
t
p
T
t
1.0E-01
3
2
1
0
0
10
20
40 50
60 70
30
Horizontal frequency (kHz)
80
90
100
0
0.001
1.0E-07
1.0E-05
1.0E-03
T
1.0E-01
t/s
Fig.14. Transient thermal impedance.
Fig.17. I
Csat
during normal running vs. frequency of
operation for optimum performance
VCC
LC
IBend
VCL
LB
T.U.T.
CFB
-VBB
Fig.15. Test Circuit RBSOA.
December 1997
5
Rev 1.000
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