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V827565N24SBJW-BO

Description
DRAM
Categorystorage    storage   
File Size243KB,16 Pages
ManufacturerProMOS Technologies Inc
Download Datasheet Parametric View All

V827565N24SBJW-BO Overview

DRAM

V827565N24SBJW-BO Parametric

Parameter NameAttribute value
Objectid106532898
Reach Compliance Codecompliant
ECCN codeEAR99
V827565N24SB
1GB 184-PIN DDR REGISTERED ECC DIMM
128M x 72
Features
184 Pin Registered 134,217,728 x 72 bit
Organization DDR SDRAM Modules
Utilizes High Performance 128M x 4 DDR
SDRAM in TSOPII and FBGA Package
Single +2.5V (± 0.2V) Power Supply
Single +2.6V (± 0.1V) Power Supply for DDR400
Programmable CAS Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
All Inputs, Outputs are SSTL-2 Compatible
8192 Refresh Cycles every 64 ms
Serial Presence Detect (SPD)
DDR SDRAM Performance
Component Used
-6
-7
Module Speed
t
CK
t
AC
Description
The V827565N24SB memory module is
organized 134,217,728 x 72 bits in a 184 pin
memory module. The 128M x 72 memory module
uses 18 ProMOS 128M x 4 DDR SDRAM. The x72
modules are ideal for use in high performance
computer systems where increased memory
density and fast access times are required.
-75
-8
D3
(PC400B)
C0
166
(PC333)
B0
133
(PC266B)
Units
MHz
ns
ns
CLK
CLK
Clock Frequency
166
143
133
125
Clock Frequency (max.)
(PC266A) (PC266B)
200
(PC333)
(PC200)
(max.)
Clock Access Time
6
7
7.5
Clock Cycle Time CAS Latency = 3
t
CK
CAS Latency = 2.5
Clock Cycle Time CAS Latency = 2.5
t
RCD
tRCD parameter
5
6
3
3
8
-
6
3
3
-
7.5
3
3
Module Speed
tRP parameter
A1 t
RP
PC1600 (100MHz @ CL2)
B0
B1
C0
PC2100B (133MHz @ CL2.5)
PC2100A (133MHz @ CL2)
PC2700 (166MHz @ CL2.5)
V827565N24SB Rev. 1.1 April 2006
1
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