Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling
and transporting these devices.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling
and transporting these devices.
Recommended Operating Conditions
Symbol
V
IN
V
CTRLH
V
CTRLL
f
SW
I
SW
T
J
Parameter
Operating Input Voltage Relative to GND
Voltage High for PWM Dimming Relative to GND
Voltage Low for PWM Dimming Relative to GND
Maximum Switching Frequency
Continuous Switch Current
Junction Temperature Range
Min
6.0
2.5
0
—
—
-40
Max
30
5.5
0.4
1
1.3
+125
Unit
V
V
V
MHz
A
°C
Electrical Characteristics
Symbol
V
INSU
V
INSH
I
Q
I
S
V
TH
V
TH-H
I
SET
R
CTRL
V
REF
R
DS(ON)
t
R
t
F
T
OTP
T
OTP-Hyst
I
SW_Leakage
θ
JA
θ
JC
Notes:
(V
IN
= 12V, @T
A
= +25°C, unless otherwise specified.)
Conditions
V
IN
rising
V
IN
falling
Output not switching (Note 5)
CTRL pin floating f = 250kHz
—
—
V
SET
= V
IN
-0.1
Referred to internal reference
Min
—
100
—
—
95
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.8
100
±15
16
50
2.5
0.25
12
20
155
55
—
69
4.3
Max
5.9
300
350
5
105
—
22
—
—
0.4
—
—
—
—
0.5
—
—
Unit
V
mV
µA
mA
mV
mV
µA
kΩ
V
Ω
ns
ns
C
C
μA
C/W
—
Parameter
Internal Regulator Start Up Threshold
Internal Regulator Hysteresis Threshold
Quiescent Current
Input Supply Current
Set Current Threshold Voltage
Set Threshold Hysteresis
SET Pin Input Current
CTRL Pin Input Resistance
Internal Reference Voltage
On Resistance of SW MOSFET
SW Rise Time
SW Fall Time
Over-Temperature Shutdown
Over-Temperature Hysteresis
Switch Leakage Current
Thermal Resistance Junction-to-
Ambient (Note 6)
Thermal Resistance Junction-to-case
(Note 8)
I
SW
= 1A
V
SENSE
= 100 ±20mV f
SW
= 250kHz
V
SW
= 0.1V~12V~0.1V C
L
= 15pF
—
—
V
IN
=30V
(Note 7)
(Note 7)
5. AL8807BQ does not have a low power standby mode but current consumption is reduced when output switch is inhibited: V
SENSE
= 0V. Parameter is
tested with V
CTRL
≤ 2.5V.
6. Refer to figure 39 for the device derating curve.
7. Test condition for MSOP-8EP: Device mounted on FR-4 PCB (51mm x 51mm 2oz copper, minimum recommended pad layout on top layer and
thermal vias to bottom layer with maximum area ground plane. For better thermal performance, larger copper pad for heat-sink is needed.
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