Preliminary Datasheet
1.5MHz Synchronous Step-down DC-DC Converter
General Description
The AP3410B is a high efficiency step-down DC-DC
voltage converter. The chip operation is optimized by
peak-current mode architecture with built-in
synchronous power MOSFET switchers. The
oscillator and timing capacitors are all built-in
providing an internal switching frequency of 1.5MHz
that allows the use of small surface mount inductors
and capacitors for portable product implementations.
Integrated Soft Start (SS), Under Voltage Lock Out
(UVLO), Thermal Shutdown Detection (TSD) and
Short Circuit Protection are designed to provide
reliable product applications.
The device is available in adjustable output voltage
version ranging from 0.6V to 0.9×V
IN
when input
voltage range is from 2.5V to 5.5V, and is able to
deliver up to 1.2A.
The AP3410B is available in SOT-23-5 package.
AP3410B
Features
•
•
•
•
•
•
•
•
•
•
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High Efficiency Buck Power Converter
Wide Input Voltage Range: 2.5V to 5.5V
Adjustable Output Voltage: 0.6V to 0.9×V
IN
Low R
DS(ON)
Internal Switches:200mΩ (V
IN
=5V)
Built-in Power Switches for Synchronous
Rectification with High Efficiency
Output Current: 1.2A
Feedback Voltage: 600mV
1.5MHz Constant Frequency Operation
Thermal Shutdown Protection
Low Dropout Operation at 100% Duty Cycle
No Schottky Diode Required
Input Over Voltage Protection
Output Over Voltage Protection
Over Current Protection
Applications
•
•
Post DC-DC Voltage Regulation
PDA and Notebook Computer
SOT-23-5
Figure 1. Package Type of AP3410B
Jun. 2013
Rev. 1. 0
1
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet
1.5MHz Synchronous Step-down DC-DC Converter
Absolute Maximum Ratings (Note 1)
Parameter
Input Voltage for the MOSFET Switch
Enable Input Voltage
LX Pin Switch Current
Power Dissipation (On PCB, T
A
=25°C)
Thermal Resistance (Junction to Ambient,
Simulation)
Thermal Resistance (Junction to Case,
Simulation)
Operating Junction Temperature
Storage Temperature
Operating Temperature
ESD (Machine Model)
ESD (Human Body Model)
AP3410B
Symbol
V
IN
V
EN
I
LX
P
D
θ
JA
θ
JC
T
J
T
STG
T
OP
V
MM
V
HBM
Value
0 to 6.0
-0.3 to V
IN
+0.3
1.8
0.4
250
130
155
-55 to 150
-40 to 85
200
2000
Unit
V
V
A
W
ºC/W
ºC/W
ºC
ºC
ºC
V
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Input Voltage
Operating Ambient Temperature
Operating Junction Temperature
Symbol
V
IN
T
A
T
J
Min
2.5
-40
-40
Max
5.5
85
125
Unit
V
ºC
ºC
Jun. 2013
Rev. 1. 0
5
BCD Semiconductor Manufacturing Limited
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